BrainMap

Mrs. Lidia Magdalena CIUREA

Prof.

Professor - INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Researcher | Teaching staff | Scientific reviewer

Magdalena L. Ciurea is Senior Researcher at National Institute of Materials Physics and conducts research activities of Nanomaterials and Nanostructures based on SiGeSn Group. She is also PhD Adviser at Doctoral School of Physics, University of Bucharest and Full Member of Academy of Romanian Scientists. She obtained her PhD in Physics at Institute of Atomic Physics, Bucharest-Magurele in 1981, under the mentorship of Academician Radu Grigorovici. Her research interests cover (i) films and multilayers with Si-Ge-Sn based quantum dots / nanocrystals embedded in dielectrics, (ii) ferroelectric HfO2, ZrO2 based structures deposited by magnetron sputtering - enhancing ferroelectricity assisted by stress, (iii) VIS-SWIR sensors with group IV nanocrystals in dielectrics for environmental, security and roads safety, (iv) electronic and photoelectric high density (Si)Ge nanocrystals floating gate non-volatile memories and (v) nanoscale strain in nanostructures & devices.

Web of Science ResearcherID: https://www.webofscience.com/wos/author/rid/B-7138-2011

Curriculum Vitae (23/09/2024)

Expertise & keywords

Multifunctional optoelectrical sensor based on two-dimensional MoS2 atomically thin layers grown by selective nucleation Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2021-2457 2022 - 2024

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation:

Project website: https://infim.ro/en/project/multifunctional-optoelectrical-sensor-based-on-two-dimensional-mos2-atomically-thin-layers-grown-by-selective-nucleation/

Abstract:

Optoelectrical multifunctional sensors will be obtained based on selective nucleation and growth of two-dimensional 2D-MoS2 atomically thin layers on SiO2/Si patterned substrates, by using Physical Vapor Deposition method. The substrate patterning will be performed by deposition of Mo pads before growth of MoS2 flakes. The precise localization of selectively grown 2D-MoS2 flakes allows the fabrication of the optoelectrical sensors by deposition of metallic contacts using photolithographic technique with alignment to the patterns of the substrate. The atomically thin 2D-MoS2 layers are very sensitive to external excitation as for example light illumination or adsorbed molecules on the 2D-MoS2 free layer surface. Using the Si substrate as gate electrode, the (photo)sensitivity of the device can be controlled and enhanced by field effect. Based on the high sensitivity expressed by electric and photoelectric behaviour, the 2D-MoS2 optoelectrical sensors are recommended for many practical applications, as for example biosensors (protein detection, DNA compatibility, acetone in human breath for diabetes, etc) and chemical sensors for pollution monitoring. The validation of the optoelectrical sensor demonstrator in this project according to TRL 3 includes the testing experiments on spectral photocurrent, as well as on electrostatic doping in 2D-MoS2 layers by field effect and adsorbed acetone molecules.

Multilayered floating gate nonvolatile memory device with GeSi nanocrystals nodes in nanocrystallized high k HfO2 for high efficiency data storage Call name: P 4 - Proiecte de Cercetare Exploratorie, 2020
PN-III-P4-ID-PCE-2020-1673 2021 - 2023

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: https://infim.ro/en/project/multilayered-floating-gate-nonvolatile-memory-device-with-gesi-nanocrystals-nodes-in-nanocrystallized-high-k-hfo2-for-high-efficiency-data-storage-multigesincmem/

Abstract:

The project goal is to fabricate a multilayered floating gate (FG) nonvolatile memory device (ML NVM) with charge storage nodes of GeSi nanocrystals (NCs) embedded in nanocrystallized high k HfO2 matrix (capacitor of top contact/ gate HfO2/ n layers of GeSi NCs in HfO2 as FG/ tunnel HfO2/ Si wafer/ bottom contact, n=1 to 5 for the 5 versions NVM1-NVM5). We target in project to obtain high performance ML NVMs (memory window >4 V, charge loss ratio

Broadband photodetector based on hydrogenated GeSn layers. Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2019-4468 2020 - 2022

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://infim.ro/en/project/broadband-photodetector-based-on-hydrogenated-gesn-layers/

Abstract:

The main goal of this project is the obtaining by magnetron sputtering (MS) deposition and hydrogenation of GexSn1-x:H alloy, a new photosensitive material for fabrication of high sensitive broadband photodetectors. By increasing the Sn concentration in GeSn alloy, the bandgap is narrowed and changed from indirect to direct bandgap semiconductor, making GeSn a good candidate for photodetectors with extended sensitivity to short-wave infrared range (SWIR). At international level, the hydrogenation of GexSn1-x to obtained amorphous and nanocrystalline GexSn1-x:H represents the novelty of the project proposal. The role of hydrogen in GexSn1-x:H alloy is to passivate the structural unintended defects, in order to increase the photosensitivity. This is similar to other semiconductors based on group IV of elements (a-Si:H and a-SiGe:H) intensively studied and reported in literature. Two different technological routes of obtaining GexSn1-x:H will be investigated: i) MS deposition of GexSn1-x films with various Sn content followed by hydrogen plasma treatment at different annealing temperatures; ii) direct deposition of GexSn1-x:H by reactive MS in atmosphere of hydrogen diluted in argon. In both cases, the nanocrystallization will be obtained by in-situ annealing during MS deposition or ex-situ by RTA treatment. For achieving the final goal that of obtaining a broadband photodetector with high sensitivity in SWIR, complex characterizations of GexSn1-x:H layers will be performed to find out the optimal technological parameters of the demonstrator. The demonstrator will be functionally tested in the lab according to TRL3. Such photodetectors with high sensitivity in SWIR are imperatively desired to replace the actual market devices based on toxic materials PbS and InGaAs. The results of the project activities may serve to future research on GexSn1-x:H for other practical applications as for example tandem a-SiGeSn:H solar cells.

Non-volatile memory based on ferroelectric HfO2 Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2019-0205 2020 - 2022

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: https://infim.ro/en/project/non-volatile-memory-based-on-ferroelectric-hfo2-ferohafomemo/

Abstract:

The project scope is to fabricate a nonvolatile memory (NVM) demonstrator based on ferroelectric HfO2 with targeted parameters of 1.5–2 V memory window and good retention, starting from TRL 2 up to TRL 3. This device benefits from ferroelectric HfO2 advantages: low influence of parasitic charge trapping on NVM performance (high memory window of 1.5–2 V); CMOS compatibility; lateral and vertical gate-stack scaling; low power operation. The project objectives are: O1) magnetron sputtering deposition of NVMs in 3 versions (V1-V3) using 2 approaches of undoped and Ge-doped HfO2: V1) HfO2/Hf/HfO2/ Si (100), V2) (HfO2/Hf)n/ Si (100) with n = 1 and 2, V3) (HfO2/ZrO2)n/ Si (100); O2) Obtaining ferroelectric HfO2 or HfZrO phase in NVMs by post-deposition rapid thermal annealing (RTA) performed on versions V1-V3 and consolidation of ferroelectricity by post-metallization annealing (PMA); RTA and PMA represent new solution; O3) Obtaining good contacts (Pt, Al); O4) Developing test samples completely characterized (NVM properties, morphology, structure); O5) Fabrication of NVM demonstrator “metal contact/ferroelectric HfO2 or HfZrO/Si (100)/metal contact”; testing of functional parameters/characteristics at TRL 3. The project is beyond state of art and has high level of novelty as it proposes new solutions of new advanced materials and new technological approaches for NVM fabrication: *controlling density of O vacancies in HfO2 by controlling Ar/O2 ratio during deposition and by depositing Hf layer between/near HfO2 layers (V1, V2); *Ge doping of HfO2 and HfZrO (V1-V3); *tailoring layers thicknesses in V3. Results: i) scientific ones - 1 ISI paper and dissemination at prestigious international conferences in the field by 2 papers; ii) technological - 1 patent application. Experienced and postdoctoral researchers ensure the project accomplishment based on their high level expertise, and project team will gain new competences and EU and international visibility in NVMs field.

Advanced nanoelectronic devices based on graphene/ferroelectric heterostructures (GRAPHENEFERRO) Call name: P 4 - Proiecte Complexe de Cercetare de Frontieră
PN-III-P4-ID-PCCF-2016-0033 2018 - 2022

Role in this project: Partner team leader

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.imt.ro/grapheneferro/

Abstract:

Applications such as high-frequency and neuromorphic circuits, optoelectronic/plasmonic detection of biomolecules or thermo-opto-electronics energy harvesting, require tunable and reconfigurable functionalities. Graphene is suitable for these applications because of electrostatic doping, its optical constants being tuned via gate voltages. However, oxide substrates limit the mobility in graphene to few thousands cm2/V•s. On the contrary, the mobility in graphene/ferroelectric (G/F) heterostructures is 2-3 orders of magnitude larger. The groundbreaking nature of the project is based on the possibility of significantly enhancing the functionality of graphene-based transistors/devices by using crystalline ferroelectric substrates instead of common oxides or SiC substrates. The G/F heterostructures allow: (i) the achievement of very high mobilities in G/F field effect transistors (FETs), which push the transistor gain in the 0.3-1 THz range, far above 70 GHz at which the maximum gain is attained nowadays, (ii) the fabrication of uncooled tunable detectors working in the THz and IR, (iii) the exploitation of the hysteretic resistance behaviour, essential for neuromorphic applications such as artificial synapses, (iv) the fabrication of reconfigurable microwave circuits, and (v) of tunable thermoelectronic devices, since graphene displays a giant thermoelectric effect. The project will consist of the design, fabrication and testing of groundbreaking, innovative nanoelectronic devices, in particular ultrafast electronic devices, neuromorphic circuits for computation, reconfigurable and harvesting devices, all based on the outstanding physical properties of G/F heterostructures. All fabrication techniques for growing graphene-ferroelectric heterostructures in this project should be scalable at wafer scale. The project is implemented by a consortium of 3 national R&D institutes and the leading Romanian university, which have the necessary advanced infrastructure.

Technologic paradigms in synthesis and characterization of variable dimensionality systems Call name: P 1 - SP 1.2 - Proiecte complexe realizate in consorții CDI
PN-III-P1-1.2-PCCDI-2017-0152 2018 - 2021

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU TEHNOLOGII CRIOGENICE SI IZOTOPICE - I.C.S.I. RAMNICU VALCEA (RO); UNIVERSITATEA DE VEST TIMISOARA (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU FIZICA TEHNICA-IFT IASI (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://infim.ro/project/vardimtech/, http://infim.ro/project/vardimtech-en

Abstract:

Last decades brought a considerable development of technologies based on ordered systems. Starting with semiconductor physics and photovoltaics, technologies soon evolved towards the utilisation on large scale of thin films and of surface / interface properties. Example go nowadays from data storage and readout (electrostatic or magnetic memories, giant magnetoresistance) to catalysis, gas sensors or photocatalysis (surface phenomena), and towards interfaces with biological matter (biosensors, templates for tissue reconstruction, interfaces between biological electrical signals and microelectronics). In Romania, crystal growth is performed since half a century; nevertheless, during the last years these activities fade out and need to be seriously reinforced, especially with the advent of new laser and detector technologies required by the Extreme Light Infrastructure facilities. Also, surface science started to be developped seriously only during the last decade, together with techniques involving self-organized nanoparticles, nanoparticle production etc. The main goal of this Project is to gather the relevant experience from the five partners, namely the experience in crystal growth from the University of Timișoara, with the surface science, nanoparticle and nanowire technologies developped by NI of Materials Physics, the cryogenic and ultrahigh vacuum techniques provided by the NI for Cryogenic and Isotopic Technologie, and the experience in ordered 2D systems (graphene and the like) owned by the NI for Microtechnologies (IMT). This common agenda will result in a coherent fostering of technologies relying on ordered systems of variable dimensionalities: 0D i.e. clusters or nanoparticles, including quantum dots; 1D i.e. free and supported nanowires and nanofibers; 2D: surfaces, interfaces and graphene-like systems; and 3D crystals of actual technological interest, together with setting up new ultrahigh vacuum, surface science and electron spectroscopy techniques.

New advanced nanocomposites. Technological developments and applications Call name: P 1 - SP 1.2 - Proiecte complexe realizate in consorții CDI
PN-III-P1-1.2-PCCDI-2017-0871 2018 - 2021

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU OPTOELECTRONICA INOE 2000 INCD (RO); UNIVERSITATEA DE VEST TIMISOARA (RO); ACADEMIA ROMANA FILIALA TIMISOARA (RO); UNIVERSITATEA BABES BOLYAI (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU FIZICA TEHNICA-IFT IASI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA "DUNAREA DE JOS" (RO); UNIVERSITATEA TRANSILVANIA BRASOV (RO); Ministerul Apararii Nationale prin Centrul de Cercetare Stiintifica pentru Aparare CBRN si Ecologie (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://infim.ro/project/kuncser_noi_directii_de_dezvoltare_tehnologica_si_utilizare_nanocompozite_avansate_47pccdi_2018

Abstract:

The development of complex nanocomposite materials consisting of different matrices (polymer-like, oxides, intermetallics, liquids) functionalized by different nasnostructured additions (carbon allotropes, magnetic nanoparticles with different organizations, nanostructured semiconductors, etc.) is the aim of this project. The unique combinations of interacting nanophases offeres to the hybrid nanocomposite material new or enhanced proprieties of high interest for applications. In this context, according to the previous experience of the involved teams, the complex project (formed by 4 component projects) is focused on the development of new optimized nanocomposite systems to be included in experimental demonstrators or final products to be transferred to economical companies. The project will contribute both to an increased scientific visibility of the partners as well as to enhancing the institutional performances by the development of new technical and scientific capacities.

GeSn layers with enhanced photosensitivity by field effect Call name: P 1 - SP 1.1 - Proiecte de cercetare Postdoctorală
PN-III-P1-1.1-PD-2016-1631 2018 - 2020

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://infim.ro/en/nimp-projects/gesn-layers-with-enhanced-photosensitivity-by-field-effect/

Abstract:

The aim of this project is to obtain GexSn1-x by magnetron sputtering (MS) for field effect (FE) enhanced photo-sensing in extended near-infrared (NIR) range 1-3um. Sensitive detection of infrared (IR) light, especially in the mid- and far-infrared ranges, is extremely desirable in many important fields such as biology, astronomy and medical science. The present IR photodetector market is dominated by III-V (InGaAs) alloys and chalcogenides (PbS, PbSe), materials of high toxicity and incompatible with silicon technology for integrated photonics. Therefore, it is important to develop new material technology based on ecologic materials as those of IV group elements, compatible with silicon technology for monolithic photonic integration. Advantage of alloying a semiconductor Ge with a semimetal Sn is the reduction of the bandgap, extending the NIR sensitivity of Ge, but also in obtaining a transition to direct bandgap IV-group semiconductors with higher optoelectronic properties. The project proposes the fabrication of GexSn1-x/oxide/Si-substrate structures. Sn concentration, layer thickness, deposition temperature and post annealing parameters will be varied for optimization of GexSn1-x films. Two type of structures will be grown by MS, nanostructured by rapid thermal annealing and characterized from point of view of structural, electrical and optical properties. The two types of structures refer to alternatives of using as gate oxide either thermally grown SiO2 or HfO2 deposited by MS. For obtaining a high spectral photoresponse, the Si substrate as a gate electrode will be employed. The unintentional doping due to local disorder (vacancies) in GeSn layers with negative consequences on photoconductivity properties is compensated by charges injected by FE, controlling the carrier density without creation of additional structural defects, changing the photo-carriers recombination and thus, improving the photoconduction properties of GeSn.

Optoelectric devices based on SiGeSn nanocrystals in oxide matrix Call name: P 4 - Proiecte de Cercetare Exploratorie
PN-III-P4-ID-PCE-2016-0552 2017 - 2019

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/ro/projects/dispozitive-optoelectrice-pe-baza-de-nanocristale-de-sigesn-matrice-oxidica

Abstract:

The goal of the project is the fabrication of optoelectric devices based on SiGeSn nanocrystals (ncs) embedded in oxide matrix for NIR-VIS range. We envisage two devices, optical sensors and photovoltaic devices that are completely new, never reported in literature. A new approach of Sn alloying of currently investigated SiGe ncs will be used.

The project specific objectives are: O1) fabrication of test samples based on SiGeSn ncs embedded in SiO2 for optical and photovoltaic devices (magnetron sputtering deposition, thermal treatment, electrical contacts); O2) complex characterisation of test samples for structure, composition, crystallinity, ncs morphology, electrical and optical properties and their correlation; O3) simulation of optical sensor and photovoltaic device; O4) fabrication and characterisation of optical sensor; O5) fabrication and characterisation of photovoltaic device; O6) performances evaluation of optical sensor and photovoltaic device based on SiGeSn ncs. By implementing these objectives, the project brings original and novel results beyond the state of the art.

The project has scientific and technological impact (elucidating ncs formation in ternary alloys, photogeneration and collection of electric charges; fabricating devices with targeted parameters), economic and social impact (less expensive and eco-friendly technologies for large scale production of optelectric devices; formation of PhD students in project field). The project results will be published in 5 ISI papers and in 1 patent application.

Equipments from the infrastructure of National Institute of Materials Physics will be used for project implementation.

Project leader has important contributions in the scientific and technological fields directly related to the project topic, i.e. Nanostructured films, Photovoltaic devices and Nanoscale strain and its effect on electronic properties. Team members have relevant and complementary expertise in the project field.

Nano-Structured GeSn Coatings for Photonics Call name: P 3 - SP 3.2 - Proiecte ERA.NET
M.ERANET-3107-GESNAPHOTO 2016 - 2019

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/projects/nano-structured-gesn-coatings-photonics-gesnaphoto

Abstract:

The objective of the project is manufacturing of nano-structured GeSn films for optical detection- emission in the short-wave infrared (SWIR) range (1-3µm). The novelty of the project consists in nano-structuring of layers containing GeSn in order to create GeSn nano-crystals with control of the size and Sn content, for obtaining high sensitivity. This material is a new group IV advanced coating material based on alloying Ge and Sn elements which extends the IR photonic range of Ge. The most important property is the transition into direct bandgap semiconductor for moderate Sn concentration, of critical importance for photonics of group IV semiconductors. Thus, the project deals with an alternative solution to the present III-V IR technology, a solution which is less expensive, environmentally friendly and compatible with Si technology. The IR detection-emission has many practical applications as for example night vision, medical applications, automotive, aviation, etc.

Hooking together European Research in Atomic Layer Deposition (HERALD) Call name:
COST Action no. MP1402 2014 - 2018

Role in this project: Key expert

Coordinating institution: Tyndall National Institute

Project partners: Tyndall National Institute (RO)

Affiliation: Tyndall National Institute (RO)

Project website:

Abstract:

High photoconductive oxide films functionalized with GeSi nanoparticles for environmental applications Call name: P 3 - SP 3.2 - Proiecte ERA.NET
M-ERA.NET-PhotoNanoP 2016 - 2018

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); OPTOELECTRONICA - 2001 S.A. (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/projects/PhotoNanoP

Abstract:

A new solution for obtaining a new advanced material (SiO2, TiO2 films functionalized with GexSi1-x nanoparticles) with targeted photoconductive properties in VIS-NIR is proposed. This material is able to spectrally discriminate between dry, wet and icy asphalt, for reducing traffic accidents. The proposed approach and material are innovative, and technological and scientific results are original, leading to 1 patent application, 3 ISI and 4 conference papers. The project creates the frame for increasing EU cooperation, developing a pan-EU partnership between 2 research institutes, a university and 2 SMEs. Each partner will gain an advanced position in own activity field becoming more visible at EU and international level. All partners will have economic benefits by winning competitive advance in photodetector market and scientific benefits. The new material is versatile as PHC properties can be tuned leading to other environmental, biomedical, food and optosecurity applications.

Capacitor-like floating gate memory device with Ge nanocrystals: new solution based on Al2O3 Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-0273 2017 - 2018

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/ro/projects/dispozitiv-de-memorie-tip-capacitor-cu-poarta-flotanta-din-nanocristale-de-ge-solutie-noua

Abstract:

The project proposes a new solution for fabrication of the demonstrator for a capacitor-like floating gate memory device based on Ge nanocrystals (ncs) as charge storage nodes, having targeted memory parameters of 2-4 V memory window and good retention characteristics (constant capacitance for more than 10000 s (standard conditions), capacitance decrease

Si, Ge nanocrystals based dosimeter capacitor Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-0206 2017 - 2018

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/projects/si-ge-nanocrystals-based-dosimeter-capacitor

Abstract:

The project proposes a new solution of MOS dosimeter, as a capacitor with a structure oxide/Ge or Si ncs layer/oxide/Si wafer with top and bottom metallic contacts, and oxide SiO2 or HfO2. It is aimed to be used as a radiation sensor in space or for medical applications. The proposed device is innovative as the approach is innovative by selecting oxide (SiO2 or HfO2) and (Si or Ge) nanocrystals to be embedded in, by modifying morphology and structure of the layer containing nanocrystals and in turn changing the deposition and annealing parameters and the thicknesses and stoichiometry of oxides. The feed-back between preparation and characterisation activities is used to maximize the sensitivity to the irradiation dose and the retention time. To prove the concept of the project, a demonstrator of the MOS capacitor-like dosimeter will be manufactured, and validated in laboratory environment, according to TRL3.

The specific objectives of the project are: deposition of Ge/oxide and Si/oxide, with oxide SiO2 or HfO2; nanocrystals formation by annealing; correlation of technological parameters with film structure and mor¬phology at different stages; manufacturing test samples of trilayer structures with metallic contacts, and testing them for the response to radiation; selection of structures with best response to radiation; validation of the innovative project concept by manufacturing a demonstrator based on trilayer structures with best response to radiation and retention time; testing the demonstrator according to TRL3;  dissemination and exploitation of the technological and scientific results (patent application, ISI and conference papers) taking into account IPRs;  coordination of activities in order to achieve all project objec¬tives, progress monitoring; continuity of information flow during project unfolding.

By accom¬plishing all these objectives, the outcome of the project, a new MOS capacitor for dose measurement as demonstrator, is obtained.

Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices Call name: Joint Applied Research Projects - PCCA-2011 call, Type 2
PN-II-PT-PCCA-2011-3.2-1120 2012 - 2016

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/ro/NODE/3960

Abstract:

The primary aim is to obtain novel nanostructured semiconductor materials based on Ge nanoparticles (nps) with optimized properties to be used in photodetectors for the visible and infrared (VIS-NIR) ranges, and also in nonvolatile (NV) memory devices. This aim will be realized in the following objectives: A) Preparation and characterization of nanostructured films based on Ge nps in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties; B) Preparation and complex characterization of experimental models for VIS-NIR photodetector and NV memory using the optimized materials; C) Fabrication of VIS-NIR photodetector and NV memory to prove experimentally the concepts of the project and its applications; D) Estimation of the economic impact.

Based on the material research (Phase 1), and on the investigations of structures and experimental models (Phase 2), two prototypes will be fabricated in Phase 3, one for the VIS-NIR photodetector, and one for the NV memory, with corresponding technical specifications. Thus, we will prove that the novel nanostructured materials based on Ge nps obtained in this project are suitable for VIS-NIR photodetectors and NV memory devices. Also, the technical and economical analyses documentation and feasibility studies will be performed (Phase 4).

The two devices will be integrated into a system for event identification and an automated test and measurement system for industrial applications and manufacturing devices will be realized.

The results obtained by achieving the project objectives have a high level of originality and novelty. Therefore, the scientific results will be promoted in 5 papers in peer-reviewed journals, and in 7 communications at prestigious international conferences. The technological results will be the object of 3 patent applications.

Young students will be involved in the project, and this will have a formative effect (Master Dissertations and/or PhD theses).

Microstructural transformations of thin films by pulsed laser irradiation at fluences lower than the ablation threshold Call name: Exploratory Research Projects - PCE-2011 call
PN-II-ID-PCE-2011-3-0268 2011 - 2016

Role in this project: Key expert

Coordinating institution: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor

Project partners: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor (RO)

Affiliation: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor (RO)

Project website: http://www.infim.ro/projects/microstructural-transformations-thin-films-pulsed-laser-irradiation-fluences-lower-ablation

Abstract:

The project refers to the microstructural transformations induced on thin films by pulsed laser irradiation at low fluences, lower than the ablation threshold. At microscopic scale, the laser irradiation actions shows some new features which are related to the laser wavelength, especially in the case of coherent laser radiation. The project work is focused on the photomechanical effect of the coherent laser beam on the structure of densified amorphous sol-gel oxide films, on structural phase modifications in mixed thin films and on the behavior of the melted metallic films and microsphere formation under the action of high power laser pulses.The structural studies are performed by conventional and high resolution transmission electron microscopy (TEM), atomic force microscopy (AFM), electron and X ray diffraction.

Novel Gain Materials and Devices Based on III-V-N Compounds Call name:
COST Action MP0805 2009 - 2013

Role in this project: Key expert

Coordinating institution: Tampere University of Technology

Project partners: Tampere University of Technology (RO)

Affiliation: Tampere University of Technology (RO)

Project website:

Abstract:

Surface and Interface Science: Physics, chemistry, biology, applications. Call name: Complex Exploratory Research Projects - PCCE-2008 call
PN-II-ID-PCCE-2008-0076 2010 - 2013

Role in this project: Key expert

Coordinating institution: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR

Project partners: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU INGINERIE ELECTRICA (RO); UNIVERSITATEA DE MEDICINA SI FARMACIE CAROL DAVILA DIN BUCURESTI (RO); UNIVERSITATEA ALEXANDRU IOAN CUZA DIN IASI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA TEHNICA DIN IASI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU TEHNOLOGII IZOTOPICE SI MOLECULARE DIN CLUJ-NAPOCA (RO); UNIVERSITATEA BABES-BOLYAI DIN CLUJ-NAPOCA (RO); ACADEMIA ROMANA FILIALA TIMISOARA (RO); UNIVERSITATEA DE MEDICINA SI FARMACIE VICTOR BABES TIMISOARA (RO)

Affiliation: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR (RO)

Project website: http://www.infim.ro/projects/siinta-suprafetelor-si-interfetelor-fizica-chimie-biologie-aplicatii

Abstract:

This project intends to provide a financial background for developing the community of Surface Science in Romania. Thematics from physics and chemistry of surfaces will be tackled together with applications of surface science in biology and in technology; also new standards will be proposed for consistent data interpretation. The Project clusterizes the most important Romanian teams with preoccupations in surface science, namely all X-ray photoelectron spectroscopy teams with most of the community of thin film deposition, cluster and nanoparticle physics, surface reactivity, surface chemistry and photochemistry, multilayer physics and applications, magnetic fluids, functionalization of surfaces, cell attachment, studies of cellular membrane. The research teams belong to highly prominent Universities and Research Institutes from practically all geographical areas of the country. The Consortium disposes of infrastructure exceeding 10 million euros, of more than one hundreed highly qualified scientists which have generated during the past years more than 3 % of the national scientific visibility. The research will concentrate into four main areas: (i) magnetic properties of surfaces and low-dimensional systems; (ii) electrical properties of surfaces and heterostructures; (iii) surface chemistry; (iv) application of surface science in functionalized systems and in biology, together with (v) an area concentrating on standardization in X-ray photoelectron spectroscopy, Auger electron spectroscopy and related techniques. Each area is divided into several thematics; each thematic has at least one in-charge scientist. This Project will foster the surface science community in Romania and will contribute strongly to the development of high-technological industrial preoccupation in all geographical areas concerned. Several cutting-edge applications are also foreseen by pursuing the fundamental research proposed.

Ge nanocrystals embedded in amorphous matrices with photoconductive properties. Call name: Postdoctoral Research Projects - PD-2011 call
PN-II-RU-PD-2011-3-0094 2011 - 2013

Role in this project: Key expert

Coordinating institution: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor

Project partners: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor (RO)

Affiliation: Institutul National de Cercetare Dezvoltare pentru Fizica Materialelor (RO)

Project website: http://www.infim.ro/ro/projects/ge-nanocrystals-embedded-amorphous-matrices-photoconductive-properties

Abstract:

Few studies in the literature focused on the (photo)electrical properties of nanocrystalline germanium (nc-Ge) based materials, in contrast with the structural and optical ones. The aim is to prepare and to study nanostructured films consisting of nc-Ge immersed in amorphous matrix with good photoconductive properties. To achieve this goal we propose the following objectives: 1 Preparation of films with different concentrations of nc-Ge embedded in amorphous matrices; 2 Study of electrical properties in correlation with the morphology of layers. Experiment and modelling; 3 Study of photoconductive properties in correlation with morphology of layers. Experiment and modelling; 4 Dissemination of research results. The intended original results are: optimal preparation conditions will be determined to obtain films with improved photoconductive properties; dominant electrical transport mechanism will be proposed and percolation parameters will be calculated; transitions between energy levels evidenced in electrical and photransport phenomena will be identified and corresponding quantum confinement energy levels will be found; films with improved photoconductive properties will be obtained. The dissemination will be made by: 3 scientific reports; 5 articles published in ISI-quoted journals; 3 contributions to prestigious international conferences; project Web page. The aim and objectives frame themselves in the Human Resources programme, Postdoctoral research projects subprogram.

Electrical transport in low dimensional Ge-Si-O systems: experiment and modeling Call name:
IDEAS 471/2009-2011 2009 - 2011

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

Modernization of the Nanostructured Materials Laboratory by the acquisition of a magnetron sputtering equipment and a thermal treatment equipment Call name:
CAPACITIES 3/2007-2009 2007 - 2009

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

Quantum phenomena in films of Si and Ge nanoclusters in SiO2 matrix Call name:
CEEX 13/2006-2008 2006 - 2008

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

Micro- and nanostructuted semiconductor materials for gas and temperature sensors Call name:
CEEX 225/2006-2008 2006 - 2008

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

Study of phototransport in Si-based nanocrystalline films Call name:
CERES 169/2004-2006 2004 - 2006

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

FILE DESCRIPTION	DOCUMENT
List of research grants as project coordinator or partner team leader
Significant R&D projects for enterprises, as project manager
R&D activities in enterprises
Peer-review activity for international programs/projects