BrainMap

Mrs. Sorina Lazanu

Dr.

Researcher - INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Researcher

Web of Science ResearcherID: B-7819-2012

Curriculum Vitae (10/01/2019)

Expertise & keywords

Novel nanostructured semiconductor materials based on Ge nanoparticles in different oxides for aplications in VIS-NIR photodetectors and nonvolatile memory devices Call name: Joint Applied Research Projects - PCCA-2011 call, Type 2
PN-II-PT-PCCA-2011-3.2-1120 2012 - 2016

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU OPTOELECTRONICA INOE 2000 INCD (RO); INTERNET S.R.L. (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/ro/NODE/3960

Abstract:

The primary aim is to obtain novel nanostructured semiconductor materials based on Ge nanoparticles (nps) with optimized properties to be used in photodetectors for the visible and infrared (VIS-NIR) ranges, and also in nonvolatile (NV) memory devices. This aim will be realized in the following objectives: A) Preparation and characterization of nanostructured films based on Ge nps in SiO2, TiO2, HfO2, with optimized photoconductive and electrical properties; B) Preparation and complex characterization of experimental models for VIS-NIR photodetector and NV memory using the optimized materials; C) Fabrication of VIS-NIR photodetector and NV memory to prove experimentally the concepts of the project and its applications; D) Estimation of the economic impact.

Based on the material research (Phase 1), and on the investigations of structures and experimental models (Phase 2), two prototypes will be fabricated in Phase 3, one for the VIS-NIR photodetector, and one for the NV memory, with corresponding technical specifications. Thus, we will prove that the novel nanostructured materials based on Ge nps obtained in this project are suitable for VIS-NIR photodetectors and NV memory devices. Also, the technical and economical analyses documentation and feasibility studies will be performed (Phase 4).

The two devices will be integrated into a system for event identification and an automated test and measurement system for industrial applications and manufacturing devices will be realized.

The results obtained by achieving the project objectives have a high level of originality and novelty. Therefore, the scientific results will be promoted in 5 papers in peer-reviewed journals, and in 7 communications at prestigious international conferences. The technological results will be the object of 3 patent applications.

Young students will be involved in the project, and this will have a formative effect (Master Dissertations and/or PhD theses).

COMPLEX STUDIES OF THE PHYSICS OF DEFECTS PRODUCED BY EXTREME FIELDS OF RADIATION IN SILICON BASED MATERIALS Call name:
PN-II-ID-PCE-2008-2 2009 - 2011

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website:

Abstract:

In spite of the fact that degradation phenomena produced in materials and devices in radiation fields, and the defects in crystalline semiconductors are studied since more than half a century, a lot of aspects are not yet clarified. The aim of the present project is to bring contributions in this subject. So, this is of fundamental research, situated at the border between semiconductor physics, particle physics, atomic and nuclear physics, with potential to be applied in high energy physics, in the information technology, in nuclear medicine.

The problems related to the correlation of defect production with the energy deposited in crystalline semiconductors in radiation fields and with spatial distribution of produced defects, to the interactions between primary defects and of their aggregation in stable defects (clusters), the stability and metastability of these agregates using energetic and thermodynamic considerations will be studied

In this project, both theoretical and experimental methods will be used.

The aim and the objectives of the project are in the frame of the programme IDEI from PNCDI II, and also in the top research subjects of the international scientific community. The research team is composed from the principal investigator, who works in the field since 1990, from two experienced researchers, one specialised in semiconductor physics (mainly electric measurements and modelling), the other (postdoc) specialised in theoretical physics, and from 3 early stage researchers: one PhD student and other 2 which could enrol in PhD studies during the project. The dissemination of results will be performed in the web page of the project, in 4 publications in ISI quoted journals, in 3 communications in international conferences, in the research and auto-evaluation reports.

FILE DESCRIPTION	DOCUMENT
List of research grants as project coordinator or partner team leader	Download (52.67 kb) 18/09/2019
Significant R&D projects for enterprises, as project manager
R&D activities in enterprises
Peer-review activity for international programs/projects