BrainMap

Mr. Martino Aldrigo

Principal Researcher II

Principal Researcher II - INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Researcher | Scientific reviewer | Designer

Web of Science ResearcherID: I-7579-2019

Expertise & keywords

Nano meta components for electronic smart wireless systems Call name: P 5.8 - SP 5.8.1 - Premiere Orizont Europa - Instituții - Competiția 2023
PN-IV-P8-8.1-PRE-HE-ORG-2023-0033 2023 - 2026

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website:

Abstract:

New communications and radar systems require small and tunable high-frequency devices, since their backbone is the Internet-of-Things (IoT). The need for ultrafast, low-energy-consumption information processing of an exponentially increasing data volume will lead to a global mobile traffic reaching 4394 EB by 2030, thus starting the 6G era (data rate up to 1 Tb/s) of an “ubiquitous virtual existence”. In today’s wireless applications, radar sensors play one of the major roles. Due to the increased need for higher sensitivity and non-destructive inspection systems, radar sensors with operating frequency in the microwave spectrum have been gaining increasing attention for smart home, non-destructive material classification, monitoring vital signals, and all the IoT application that need micro-motion detection. The market penetration for these sensors is now hampered by (i) the limited antenna performance and (ii) the frequency selectivity and tunability. SMARTWAY proposes novel architectures based on new paradigms that exhibit a significant decrease in energy consumption while improving speed/performance and miniaturization. The disruptive nature of the targeted approach relies on progress towards the wafer-scale integration of two-dimensional (2D) materials and metamaterials (MMs) into radar sensor suitable for IoT sensing applications. The final outcome of this support activity will be a band-pass filter in the 1–5 GHz range based on nanoscale ferroelectric and carbon-based materials, thus providing brand-new designs of nanoelectronics components with emphasis on compatibility and integration of different materials/technologies.

Beam-steering antenna arrays based on nanostructured graphene/graphite for advanced microwave communications Call name: P 4 - Proiecte de cercetare exploratorie - PCE-2021
PN-III-P4-PCE-2021-0223 2022 - 2024

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.imt.ro/steering-graph/

Abstract:

The goal of STEERING-GRAPH is to integrate nanostructured graphene/graphite into CMOS-compatible beam-steering antenna arrays, in which the radiating elements will be made of a carbon-like material that ensures gain tunability (as well as frequency and matching reconfiguration), whereas the modulation of the phase needed to steer the beam of the array will be obtained using memristors/memtransistors integrating graphene/graphite layers and doped/undoped hafnium oxides. This way, the outcome of STEERING-GRAPH will be a carbon-based phased antenna array with non-volatile memristor-like switches, providing good RF performance and low-power consumption, since the non-volatility state entails that the controlling signals do not need to be applied continuously, thus minimizing power consumption (i.e., in the range 10–100 mW) and reducing antenna’s sensitivity to power outages.

The concrete objectives of STEERING-GRAPH are: (1) design, fabrication, and experimental characterisation of nanocrystalline graphite-based antennas and antenna arrays; (2) design, fabrication, and experimental characterisation of two- or three-terminal memristors based on dielectric/ferroelectric hafnium oxides and graphene/graphite; (3) hybrid and, then monolithic integration of antenna arrays and memristors/memtransistors for CMOS-compatible „non-volatile and low-power beamforming applications”.

SMART multilayer holographic label manufacturing technology with temperature sensor and anticopying metal particles Call name: P 2 - SP 2.1 - Proiect de transfer la operatorul economic
PN-III-P2-2.1-PTE-2021-0646 2022 - 2024

Role in this project:

Coordinating institution: OPTOELECTRONICA - 2001 S.A.

Project partners: OPTOELECTRONICA - 2001 S.A. (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: http://smartholotemp.optoel.ro

Abstract:

Globally, the trade in counterfeit goods is the second largest source of organized crime revenue and is surpassed only by illicit drug trafficking, reaching up to a value of $ 2,200 billion annually. An effective solution to these problems is to attach holographic anti-counterfeiting labels to the product/box. Lately, the need has arisen to introduce new security elements, the fulfillment of new technical parameters and new methods of integrating them with the product.

Taking into account these aspects, the project proposes the development of an innovative technology for the manufacture of a SMART multilayer holographic label with a high degree of security, which can be implemented using the existing infrastructure at OPTOEL. This label will contain different security elements: i) passive RFID structure with temperature sensor; ii) security element consisting of metal microparticles deposited randomly; iii) holographic label structure with nanotext security features; (iv) holographic security features with optical and morphological properties. The project will have an important impact on the consortium through: - the technology transfer carried out by IMT to OPTOEL, in order to implement the new security elements and technological stages necessary for their integration on the OPTOEL manufacturing line; - technology transfer from IMT to improve the optical and morphological properties of structures with a high degree of security by characterizing them in intermediate stages; - developing a partnership between the private environment and the research/development environment by assimilating the RDI results and transferring their knowledge to the economic agent; - increasing the innovation capacity of OPTOEL and strengthening it to the creation of new technologies and products with exploitation potential on the internal and external market.

New semiconductor ferroelectric material for digital applications Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2021-3183 2022 - 2024

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: https://www.imt.ro/ferromemolog/index.html

Abstract:

The project proposes to develop a new semiconductor ferroelectric at the wafer scale NiO:N (NiO doped with N) and based on it to develop switchable rectification devices, logic gates and transistors with memories where the logic operation and memory are in the same place. We have obtained the demonstration of the ferroelectricity in atomically-thin NiO doped with N. The advantages of a NiO:N ferroelectric semiconductor films are very important since on a single chip we can combine various functions of semiconductors, such as amplification and digital processing, with those specific of ferroelectrics, such as memory. Therefore, on a single chip, it could be possible to assemble all electronic functions for in-memory computing, going thus beyond the von Neumann computing architecture used today, in which the memory and the digital processing unit (ALU) are separated and the computer consumes the largest part of its electric power to transfer data between these two units.

The main outcome of this project will be the foundation of a technological platform for the ferroelectric field-effect-transistor memory devices, logic gates with memories, and for memory diodes devices with logic gates.

First demonstrator (designed to be realized from TRL 2 up to TRL 4) is a CMOS compatible device in which several layers are used forming an MFM (metal–ferroelectric–metal) diode in which, it is used, in frist time, as a ferroelectric material, a NiO:N film, then with HfO2:Zr. The Ferroelectric films layer will have thicknesses between a few nanometers and 30 nm.

Second demonstrator (designed to be realized from TRL 2 up to TRL 4) is a ferroelectric FET (Fe-FET) having as channel a graphene monolayer transferred at the wafer scale.

Both demonstrators are advanced devices at the wafer scale in the area of neuromorphic computation since the logic and memory operations are taking in the same place as in the case of neurons.

Nanomaterials enabling smart energy harvesting for next generation Internet of Things Call name:
Proposal ID 951761 2020 - 2023

Role in this project: Partner team leader

Coordinating institution: TYNDALL - UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK

Project partners: TYNDALL - UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK (); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD ()

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD ()

Project website:

Abstract:

The 4th Industrial Revolution builds on use of emerging technologies and their fusion in the sense of blending of physical and digital spheres. As the modern society grows, the new urges for efficient, sustainable and ecological materials has increased. The NANO-EH project will follow this trend and focus on possible improvement of energy harvesting materials.

NANO-EH wants to exploit smart nanomaterials (e.g. Hafnium Zirconium Oxides and nanocellulose-based biodegradable nanomaterials) that are non-toxic, lead- and rare earth-free materials, and will demonstrate their recyclability potential at module level. This can be especially useful in the context of communication technologies and further development of Internet of Things (IoT) for newer application such as personalised medicine of the future, smart farming and environmental monitoring.

NANOMATERIALS ENABLING SMART ENERGY HARVESTING FOR NEXTGENERATION INTERNET-OF-THINGS Call name: P 3 - SP 3.6 - Premierea participării în Orizont 2020
PN-III-P3-3.6-H2020-2020-0072 2021 - 2023

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.imt.ro/NANO-EH_24.2021/

Abstract:

The 4th Industrial Revolution (4IR) builds on the Internet-of-Things (IoT) paradigm, as it relies upon the scenario of having billions of interconnected autonomous mobile devices, with unprecedented processing power, storage capacity and access to knowledge. At the same time, the 4IR should be increasingly eco-friendly, by exploiting technological breakthroughs in everyday life (such us artificial intelligence, wireless communication and quantum computing). The biggest bottleneck for 4IR is that in most situations, IoT devices/networks will be remotely deployed, so that maintenance may be either inconvenient or impossible. This implies that IoT devices either have to embed energy sources consistent with their operative lifespan or that clean and renewable energy convertors must sit on board. The significant broadening of the wireless communication spectrum in Europe makes the Radio frequency (RF) energy scavenging a highly desirable way forward for clean powering of the next generation IoT. NANO-EH has the ambitious vision of creating a pathway for translating forefront knowledge of unique high frequency properties of emerging classes of nanomaterials into advanced device engineering for scalable miniaturized energy harvesting/storage submodules. This target will be reached by developing non-toxic and rare earth/lead-free materials exhibiting CMOS-compatibility and scalability for low cost and large-scale manufacturing.

NANOelectronics based on a new generation of hafnium oxide FERROelectrics for future RF devices and circuits Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2019-0052 2020 - 2022

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.imt.ro/NANOFERRO-RF/index.html

Abstract:

Over the past five decades the continuous development of silicon (Si)-based microelectronics devices has revolutionized our everyday life, but they are now operating close to their theoretical limits in terms of device temperatures, power densities, operational frequencies and dimensions. Due to these limitations, the growth rate of Si-based CMOS technologies is starting to level out and this is becoming a bottleneck for further progress, particularly for the growing field of high-frequency electronics. To overcome the latter problem, NANOFERRO-RF proposes the concept of nanoscale high-frequency oxide electronics. In order to achieve this goal, NANOFERRO-RF will exploit a major breakthrough in materials science, i.e. the ultra-low voltage (i.e. ±3 V) high-frequency tunability of novel complex ferroelectric ultrathin films based on doped hafnium (Hf) oxide, with a thickness of few nanometres (i.e. between 6 and 9 nm). NANOFERRO-RF is based on recent and complementary achievements of the proponents, and its main goal is the validation at TRL 4 of a microwave receiver in the X band (i.e. 8-12 GHz) based on miniaturised Hf-based phase shifters, miniaturised Hf-based bandpass (X band) filters, and phased antenna arrays with frequency tuning characteristics. The outcome of NANOFERRO-RF will be a demonstrator designed with well-established electromagnetic/circuit principles, and that will possess frequency-scalability properties. This way, it will be suitable for all bands of particular interest for modern and future industrial applications, i.e. 1-6 GHz (wireless/mobile apps), 10-15 GHz (SatCom) and 24-30 GHz (NextGen 5G).

Advanced nanoelectronic devices based on graphene/ferroelectric heterostructures (GRAPHENEFERRO) Call name: P 4 - Proiecte Complexe de Cercetare de Frontieră
PN-III-P4-ID-PCCF-2016-0033 2018 - 2022

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/grapheneferro/

Abstract:

Applications such as high-frequency and neuromorphic circuits, optoelectronic/plasmonic detection of biomolecules or thermo-opto-electronics energy harvesting, require tunable and reconfigurable functionalities. Graphene is suitable for these applications because of electrostatic doping, its optical constants being tuned via gate voltages. However, oxide substrates limit the mobility in graphene to few thousands cm2/V•s. On the contrary, the mobility in graphene/ferroelectric (G/F) heterostructures is 2-3 orders of magnitude larger. The groundbreaking nature of the project is based on the possibility of significantly enhancing the functionality of graphene-based transistors/devices by using crystalline ferroelectric substrates instead of common oxides or SiC substrates. The G/F heterostructures allow: (i) the achievement of very high mobilities in G/F field effect transistors (FETs), which push the transistor gain in the 0.3-1 THz range, far above 70 GHz at which the maximum gain is attained nowadays, (ii) the fabrication of uncooled tunable detectors working in the THz and IR, (iii) the exploitation of the hysteretic resistance behaviour, essential for neuromorphic applications such as artificial synapses, (iv) the fabrication of reconfigurable microwave circuits, and (v) of tunable thermoelectronic devices, since graphene displays a giant thermoelectric effect. The project will consist of the design, fabrication and testing of groundbreaking, innovative nanoelectronic devices, in particular ultrafast electronic devices, neuromorphic circuits for computation, reconfigurable and harvesting devices, all based on the outstanding physical properties of G/F heterostructures. All fabrication techniques for growing graphene-ferroelectric heterostructures in this project should be scalable at wafer scale. The project is implemented by a consortium of 3 national R&D institutes and the leading Romanian university, which have the necessary advanced infrastructure.

Combined technologies for intelligent multi layer high security holograms development Call name: P 2 - SP 2.1 - Proiect de transfer la operatorul economic
PN-III-P2-2.1-PTE-2019-0578 2020 - 2022

Role in this project:

Coordinating institution: OPTOELECTRONICA - 2001 S.A.

Project partners: OPTOELECTRONICA - 2001 S.A. (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://tecomholisig.optoel.ro/

Abstract:

The project proposal aims to increase the competitiveness of Optoelectronics 2001 through technology transfer from a prestigious R&D entity recognized on the market. The project in partnership between a CD entity and an SME entity aims to develop a modern technology for the production of intelligent holograms that will allow an integration in the modern digital technologies so that the beneficiary and the consumer can benefit from what exists on the market. The consumer has a high degree of confidence that he will use original products safe for health, safe for traffic safety, etc. The beneficiary is in turn protected from financial losses, from loss of customer confidence. the beneficiary is also benefited by the introduction of new modern technologies with implications in logistics, traffic safety, reducing the running time of the stocks, the speed with which useful reports are determined and finally with financial and commercial advantages. A hologram will be developed. intelligence through combined technologies. The hologram will have a high degree of security and will integrate a passive RFID. In this way, the hologram becomes a new generation, adapted to the digitalization of the economy.

Artificial permittivity and permeability engineering for future generation sub wavelength analogue integrated circuits and systems Call name: P 3 - SP 3.6 - Premierea participării în Orizont 2020
PN-III-P3-3.6-H2020-2020-0084 2021 - 2021

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: https://www.imt.ro/NANOPOLY/

Abstract:

NANOPOLY proposes a ground-breaking, yet cost effective, method to extend our control over impedance and parasitic phenomena in monolithic circuit components, by independently tuning electric permittivity and magnetic permeability of the integrated layers to values far beyond what nature can provide. This approach will re-define all components used in existing analogue circuit design regardless of technology. NANOPOLY will implement this concept on existing technology (such as SiGe) and will also employ novel 2D materials characterized by high mobility, in order to complement minimal thickness and transferability with impedance engineering, thus obtaining unprecedented performance of electronic components. This scheme (i.e. the meta-layers complemented with 2D materials) aims at providing an entirely novel concept of meta-electronics that promises a nano-sized circuit platform with a new performance envelope, useful in all future analogue applications such as miniaturized consumer electronics, health monitoring, high-end THz applications. NANOPOLY develops also 2D material SiGe-based Tx/Rx (emitting / receiving) modules including the antenna with a total footprint of λ/20 and state-of-the-art performance.

NANO components for electronic SMART wireless systems Call name: P 3 - SP 3.6 - Premierea participării în Orizont 2020
PN-III-P3-3.6-H2020-2020-0073 2021 - 2021

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: https://www.imt.ro/NANOSMART_suport/

Abstract:

In the modern world everything goes wireless and everyone goes mobile. To sustain this trend, higher frequency, smaller, more complex analogue electronics with beam steering capabilities are needed. The objective of NANOSMART is to develop technology for future generation, smart monolithic Transmit / Receive front-end ICs capable of RF switching, power management, high efficiency, at a fraction of the footprint and cost of current solutions. NANOSMART addresses this need by developing a new technological platform based on CNT and 2D material electronics (the two most promising technologies to replace Silicon electronics in the future). NANOSMART develops unique concepts already proven by the consortium such as deep sub-wavelength antennae, CNT NEMS for RF switching, CNT-based nano-electromechanical reconfigurable filters and multiple FET technologies. Monolithic integration of all technologies mentioned above will provide a compact platform including new amplifier architecture, power management, RF switching and antennae on one monolithically integrated chip. Within the front-end IC, three sensor types (temperature, humidity and RF radiation built from novel technology) will also be integrated to provide smart, autonomous system reaction and thus improve accuracy, power efficiency and real-time system health monitoring and on-the-fly response to ambient conditions.

Smart Radio Frequency IDentification (RFID) Technology exploiting Two-Dimensional Material-based Time-Modulated Arrays Call name: P 1 - SP 1.1 - Proiecte de cercetare Postdoctorală
PN-III-P1-1.1-PD-2016-0535 2018 - 2020

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/M-TMA-ID/index.php

Abstract:

Aim of the present Postdoc project is to propose a „smart” Radio Frequency IDentification (RFID) system, operating in the X band (i.e. in the 8 - 12 GHz frequency range), thus extending the classical microwave range of RFID systems, by exploiting the last (and often unknown) 2D materials, especially the so-called 2D chalcogenides. This aspect will be the most challenging issue of the project and, to the proponent’s knowledge, no solution has been proposed so far to integrate 2D materials in RFID/Wireless Sensor Networks (WSNs) systems. Another important issue is represented by the so-called Time-Modulated Arrays (TMAs). The main advantage of such devices is the achievement of ultra-low Side Lobe Levels (SLLs) in the far-field pattern. The exploitation of TMAs, in combination with antenna re-configurability based on 2D materials, will give a large number of degrees of freedom in obtaining optimized and high-performance „smart” RFID systems, with practical applications in WSNs. The rigorous design of the TMAs via a combined electromagnetic/nonlinear technique, based upon the effective electrical characteristics of 2D materials for both antennas and switches, will provide a robust platform for the successive fabrication of the TMAs and their experimental characterization.

GRAPHENE COMPOSITES FOR ENHANCING ELECTRIC AND THERMAL PERFORMANCES Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-0025 2017 - 2018

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); RENAULT TECHNOLOGIE ROUMANIE SRL (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/graphenecar/

Abstract:

One of the dominant factor in improving CO2 emissions and fuel consumption is the reducing the weight of the car. By subtracting 50kg from total mass of the car ones could obtain a reduction of 5g CO2/km and 0,1 l/100km in fuel consumption. A reduction of 100kg of car mass allows the reach of 100km/h speed faster by 1 second. Having these coordinates it is obvious that the future cars must be lighter, and to obtain this kind of mass reduction it is necessary to use new materials.

Therefore, the project is dedicated to two demonstrators starting from TRL 2 and reaching TRL 4 to be developed with Renalut Technologies Romania (RTR) having the following aims (i) on demonstrator is graphene-polymer composite for replacing cooper in the car with very light cables (ii) a thermal isolator and fire retard nanomaterial based on graphene-nanocellulose composites.Overall, TRT estimates that 50 % of weight of the cables and thermal isolation will be reduced in this way. Intensive electromagnetic, electrical, and thermal tests will be made using these demonstrators. The final test will be done at RTR automotive testing center of cars.

Wafer level encapsulation system for MEMS structures Call name: Projects for Young Research Teams - RUTE -2014 call
PN-II-RU-TE-2014-4-2010 2015 - 2017

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/WALES

Abstract:

The aim of the project is to develop an wafer level encapsulation method for MEMS structures.

Proposed method is based on using a solid lid, which will be applied over some test structures to check the method validity; different test structures will be considered, like planar waveguides (CPW), filters and MEMS switches. The lid will be made of silicon by its micromachining.

The lid will be bonded over test structures using 3 different methods: anodic bonding, thermocompression and by using adhesive layers (polymers).

Test structures contact will be performed using conductive through silicon vias manufactured in the lid (TSV – Through Silicon Via). The vias will be manufactured by dry etching of the silicon lid – a DRIE (Deep Reactive Ion Etching) equipment will be used in this case. For the lid structures with conductive TSV manufacturing, silicon wafers having different thicknesses will be used and 2 types of TSV will be tested, with vertical and tapered walls.

The conductive layer will be made of gold, which is a novelty in this field. For this 2 methods will be also used, one consisting of completely sealing using gold (will be completely filled for at least 50µm), the second one consisting in using of gold just for signal supply while via will sealed using different dielectric layers.

Applications of substrate integrated waveguide structures for measuring the permittivity of dielectric materials in microwave domain Call name: Projects for Young Research Teams - RUTE -2014 call
PN-II-RU-TE-2014-4-1198 2015 - 2017

Role in this project: Key expert

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/siwcell/

Abstract:

The main target of this project consists in the development of a novel technique based on SIW chokes for measurement of dielectric samples (solid or liquid) placed inside of a SIW cell. The bandwidth target covers 5 - 6 GHz band for a single cell, expandable to 4 - 7 GHz based on minor changes of the system. The efficiency of these chokes will be investigated. An original scalar measuring system which allows simultaneous extraction of the reflection and transmission coefficient amplitude, associated to the manufactured cell will be realized. The determination of two circuit parameters allow a better correlation of the experimental results, with a rapid effect on the high precision of the computing values of both real and imaginary parts of the permittivity. A typical 7.5% accuracy is expected for the measuring system. Electromagnetic models will be employed for the development of SIW cells having high Q factor. Also, a mathematical model for post-processing of the experimental data will be implemented in order to determine with high accuracy the permittivity of the measured samples.

Temperature sensor based on GHz operating AlN/Si SAW structures Call name: Joint Applied Research Projects - PCCA 2013 - call
PN-II-PT-PCCA-2013-4-0677 2014 - 2017

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO); ROM-QUARTZ S.A. (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/setsal

Abstract:

The main objective of this project consists in the manufacturing of the first temperature sensor based on a SAW type device on AlN/Si. The sensor is based on the variation of the SAW resonance frequency vs. temperature. The sensor will be characterized ”on wafer” in the 25-150 oC temperature range. The sensor structures mounted on a special ceramic carrier, provided with SMA connectors and cables, will be characterized in the 5-500 K temperature range inside a cryostat. We aim to obtain a sensitivity >75 ppm/oC (on-wafer measurements) and 60 ppm/ oC for measurements with connectors and cables, in the 23-150 oC temperature range.

The project corresponds to the world wide effort to obtain acoustic devices operating in the gigahertz frequency range, using wide band gap semiconductors (AlN, GaN). These materials have very good piezoelectric properties. High quality GaN and AlN layers grown or deposited on Sapphire SiC or Si substrate permits to use in the fabrication protocol nanolithography, micromachining techniques and monolithic integration. The advantage of using AlN for the SAW structure consist in the possibility to obtain a higher resonance frequency and a higher sensitivity for the sensor. The project has few objectives beyond the state of the art.

The main element will be a SAW structure on AlN/Si with the resonance frequency in the 6-9 GHz range. The highest resonance frequency obtained up to now for SAW structures on AlN/Si is 5.1 GHz and was reported by the IMT and INCD-FM groups, partners in this project, using an IDT structure with digits and interdigit spacing 300 nm wide. This project requires interdigitated transducers having the digit/interdigit spacing 80-150 nm wide, a challenge due to the major difficulties of the nanolithographyic process on materials like AlN or GaN. Up to now, the narrowest lines on AlN have been reported on an AlN/Diamond based SAW structure in 2012 (200 nm).

For the proposed sensor a „single resonator” structure will be developed. Compared with classical structures based on face-to-face resonators and delay lines, the single resonator structure offers few advantages: higher quality factor, lower losses and mainly, higher values for the sensitivity, as it was recently proved by IMT for GaN.

A two steps, low temperature, deposition process will be developed, for the synthesis of thin AlN films. The goal is to lower the FWHM of rocking curve at 1.5° for the AlN films deposited on Si.

There is a potential advantage of monolithic integration of the SAW based AlN temperature sensor in a CMOS ICs. AlN technology is CMOS compatible, due to its low deposition temperature. In such circuits fabrication protocols contain nanolithographic processes, therefore these processes for the sensor will not add significant costs.

The project consortium consists in four teams with excellent expertise and complementarity in the project topics. The IMT team has many contributions in the state of the art for acoustic devices on GaN and AlN, in nanolithography and microwave characterization. INCD-FM has an excellent expertise in high quality AlN films deposition. UPB has excellence expertise in design and modelling of high frequency devices and circuits. ROMQUARZ is the only Romanian enterprise with an authentiq experience in SAW type devices manufacturing on classical piezoelectric materials.They have been involved in SAW devices manufacturing on non-semiconductor materials (quartz, lithium niobate, etc) in the last 20 years.

Graphene nanoelectronic devices for high frequency applications Call name: Exploratory Research Projects - PCE-2011 call
PN-II-ID-PCE-2011-3-0071 2011 - 2016

Role in this project: Key expert

Coordinating institution: INSTITUTUL NAŢIONAL DE CERCETARE-DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT Bucureşti

Project partners: INSTITUTUL NAŢIONAL DE CERCETARE-DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT Bucureşti (RO)

Affiliation:

Project website: http://www.imt.ro/grafenerf/

Abstract:

The project will explore the graphene devices for ultrafast communications beyond 60 GHz. Similar to the famous Moore law, the Edholm law states that the need for higher bandwidths in wireless communications will double every 18 months. Today, for the wireless LANs, the carrier frequencies are around 5 GHz and the data rates are 110-200 Mb/s. However, according to Edholm law, wireless data rates around 1-5 Gb/s are required in few years from now. This means that the carrier frequencies for wireless communications should become higher than 60 GHz. However, in this bandwidth the devices and circuits able to form a wireless link at room temperature are very scarce. This limitation is due to relative high charge scattering rate and relative low mobilities encountered in all semiconductors at room temperature. So, in few years the ever increasing demand for ultrafast wireless communications will not be fully satisfied using the existing semiconducting technologies. To solve this expected bottleneck , we propose a radical solution which consists in using other materials and circuit configurations to fulfill the clear tendencies indicated by Edholm law. More specifically, we intend to design, fabricate and test miniaturized devices which work beyond 40 GHz based on graphene. Why graphene? Graphene has mobilities which are greater by orders of magnitude compared to compound semiconductors and other important properties outperforming any known material.

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List of research grants as project coordinator or partner team leader	Download (36.98 kb) 05/12/2019
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