BrainMap

Mrs. Ioana Pintilie

Dr, senior researcher rank I

scientific researcher rank I - INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Researcher | Scientific reviewer

Curriculum Vitae (10/10/2019)

Expertise & keywords

Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2 Call name:
780302 2018 - 2022

Role in this project: Partner team leader

Coordinating institution: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Project partners: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (); STMICROELECTRONICS CROLLES 2 SAS (); NAMLAB GGMBH (); ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (); ECOLE CENTRALE DE LYON (); NATIONAL CENTER FOR SCIENTIFIC RESEARCH "DEMOKRITOS" (); FORSCHUNGSZENTRUM JULICH GMBH ()

Affiliation: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ()

Project website: https://www.3eferro.eu/

Abstract:

Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allowflexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues.

3eFERRO introduces new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for “fine-grained” logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allowssmart gating for “normally-off” computing.

The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology.

A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.

Defect engineered p-type silicon sensors for LHC upgrade Call name:
CERN-RO 11 2018 - 2019

Role in this project: Project coordinator

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA ()

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA ()

Project website:

Abstract:

The specific project proposed here is embedded as part of the RD50 efforts, in the subgroup Defect and Material Characterization. The director of the present project is the leader of the NIMP team involved in the CERN-RD50 and the convener of this research line within the RD50 collaboration. The general objective of the proposed project is to improve the radiation hardness of different types of silicon sensors to be used for ATLAS and CMS Strip Tracker upgrade (single pads, pixel and strips, LGAD and HVCMOS) built on p-type standard float zone (STFZ), epitaxial (EPI) and defect engineered Si. Since in p-type (Boron doped) Si the most obvious change observed in the electrical performance is the loose of the doping due to irradiation, thought to be caused mainly because of forming the BiOi trapping centre, the project addresses two defect engineering approaches: (i) intentionally adding Carbon impurity in the bulk of boron doped Si, with the aim of changing the usual defect formation path during irradiation, by slowing down this way the boron removal while creating other carbon containing defects with much lower impact on the electrical characteristics of the sensors at their operation temperature; (ii) to dope the silicon with Gallium instead of Boron. The project is thus focusing on investigation, analyses and modelling of the defect generation and kinetics induced by irradiation in standard Boron doped and/or Carbon co-doped/implanted Si as well as in Gallium doped silicon. The specific investigation techniques that will be employed (Deep Level Transient Spectroscopy, Thermally Stimulated Current and Thermally Dielectric Relaxation Current methods, High Resolution Transmission Electron Microscopy, I-V and C-V electrical characterization) will deliver defect input parameters for developing theoretical models able to calculate (numerically and in some cases even analytically) and predict the impact of radiation induced defects on the electrical properties of different types of Si particle sensors in various operation scenarios as well as the defect generation and kinetics in the presence of different types of impurities. The ultimate goal of the project is to provide a comprehensive knowledge of radiation induced defects and their generation mechanisms which will be finally used to improve the radiation hardness of pad, LGAD and HVCMOS devices. Based on the mentioned defect engineering studies, viable theoretical models describing and predicting the generation and evolution of the defects in the presence of intentionally added impurities will be achievable. This way it will be possible to develop during the project the strategy for optimizing the impurity content which would finally reveal the required performance of each of the envisaged p-type silicon sensors. These studies will start on already fabricated or planned to be produced in the next months, pads, LGADs and HVCMOS sensors. At the beginning of the 3rd project year, optimized defect engineered p-type sensors will be produced within the RD50 collaboration, based on the project results obtained until then. The new run of experiments on optimized sensors will be performed during the last project year and it is expected that they will fully validate the predictions evolved from modelling & experimental results performed before. If this will not be the case and it will be some place for further improvements, the obtained results will be accounted for correcting the previous developed models and provide new optimization solutions to be considered beyond the present project.

Field effect transistors based on new transparent heterostructures synthesized at low temperatures Call name: Projects for Young Research Teams - RUTE -2014 call
PN-II-RU-TE-2014-4-1122 2015 - 2017

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/projects/field-effect-transistors-based-new-transparent-heterostructures-synthesized-low

Abstract:

The main objective of the project is to manufacture transparent field effect transistors with superior performances, based on aluminum nitride gate dielectrics. Although aluminum nitride is a very promising material for such type of applications, its use as gate dielectric in transparent transistors is an international novelty. Therefore, this project can generate, by its implementation, a significant impact to the development of transparent electronics. The project proposal will entail complex and fluid research activities, from the synthesis of materials and their characterization in view of optimization, to the fabrication of high performing devices on both rigid and flexible substrates. In order to achieve transistors with an functional response superior to the one of the devices used currently in transparent electronics, the project team will employ a series of optimization solutions (testing new geometries, post-fabrication thermal treatments and various encapsulation solutions). Last but not least, the project will represent a great opportunity for the young project team to form a strong scientific nucleus, which, by using the complex infrastructure of the host institution, will be able to contribute to the progress of micro-nano-electronics, on both nationally and internationally level.

Optimized pyroelectric materials through the polarization gradient concept and experimental model for a pyroelectric detector with potential for applications in monitoring high power/energy lasers. Call name: Joint Applied Research Projects - PCCA 2013 - call
PN-II-PT-PCCA-2013-4-0470 2014 - 2017

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA

Project partners: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO); INTERNET S.R.L. (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)

Project website: http://www.infim.ro/projects/optimized-pyroelectric-materials-through-polarization-gradient-concept-and-experimental

Abstract:

The project aims to develop materials with optimized pyroelectric properties using the polarization gradient concept and develop integral pyroelectric detectors for the near infrared (700 nm) to THz (≤100 µm) wavelengths range. These detectors have potential application also in the detection of high power or high energy laser beams (e.g. the lasers of ELI-NP project). The materials to be used in this project are ferroelectrics with a perovskite structure such as Pb(Zr,Ti)O3 (PZT) or (Ba,Sr)TiO3 (BST) due to the fact that the transition temperatures can be modified by changing the Zr or Sr content. These materials will be combined in structures of multilayers with gradient in concentration and polarization in order to increase the figure of merit M given by the ratio between the pyroelectric coefficient p and the dielectric constant ε (M=p/ε).

The present project proposes a novel way of increasing the merit figure M by increasing the pyroelectric coefficient. This can be achieved by developing materials that exhibit a concentration gradient in the direction of the polarization, which introduces a succession of phase transitions at different temperatures, leading to a more abrupt variation of the polarization with the temperature and thus to a larger pyroelectric coefficient.

Another effect to turn to account is the temperature variation of the dielectric constant which can contribute to further increase the total pyroelectric coefficient. The temperature variation of ε can contribute to the pyroelectric signal if an electric field is applied to the ferroelectric material in order to maintain a stable polarization state, thus averting possible signal variations caused by the ambient temperature conditions.

The materials with gradient in concentration and polarization will be realized in bulk form, as ceramic wafers (25 mm minimum diameter and 6 mm thickness) by using the spark plasma sintering (SPS). Alternately, the ceramic technology coupled with classical sintering, or hot press, can be used. The sintering conditions will be optimized in order to obtain the best p/ε ratio. The selected material will then be used to build the active elements for the pyroelectric detection. In this respect, metallic electrodes will be deposited and one of them will be blackened in order to ensure a better absorbtion of the incident electromagnetic radiation. A novel approach is that carbon nanotubes are to be used for the blackening. This way the absorbtion coeficient can be increased close to 1. The active element will then be used to create pyroelectric detectors, including the electronics for signal processing and the sofware needed for PC display. Beside the mentioned ceramic materials, epitaxial multilayered structures with gradient in concentration and polarization will be realized and their pyroelectric detection properties will be investigated as well during the project.

The consortium is formed by 3 partners: coordinator of the project –CO is a national institute with experience in ceramic materials and pyroelectric detection; one university –P1 with experience in preparation of ceramic powders; one company –P2 specialized in signal procesing and different types of electrical measurements. CO and P1 will develop the active element for the pyroelectric detection and P2 will develop and test the experimental model of the system for pyroelectric detection including all the electronics and the sofware needed for the different types of applications for which the pyroelectric detector is developed by CO and P2: automatizations, non-contact measurements of temperature or monitoring of the high power/energy laser beams. The ultimate goals are to obtain: a technological process for obtaining the active element of pyroelectric detection, as well as two experimental models, one for the Pyroelectric Detector and one for a Pyroelectric Detection System used to detect high intensity laser beams.

Effect of interfaces on charge transport in ferroic/multiferroic heterostructures Call name: Complex Exploratory Research Projects - PCCE-2011 call
PN-II-ID-PCCE-2011-2-0006 2012 - 2016

Role in this project: Key expert

Coordinating institution: National Institute of Materials Physics

Project partners: National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); Alexandru Ioan Cuza University (RO)

Affiliation: National Institute of Materials Physics (RO)

Project website: http://www.infim.ro/projects/effect-interfaces-charge-transport-ferroelectricmultiferroic-heterostructures

Abstract:

The main objective of the project is to perform a detailed study of interfaces and their effect on the charge transport properties in a number of well defined artificial multiferroic structures. Charge transport is beneficial in some cases, for example in tunnel junctions, but can be detrimental in other cases, as for example devices based on magnetoelectric effect or in capacitor like structures. In all cases, at least the interfaces with the metallic electrodes are involved in charge transport, but other interfaces can be also involved if multilayer structures are used. The study will be performed on thin films and/or nanostructures, therefore a significant influence of interfaces on the electronic and ionic charge transport is expected. The start will be from simple capacitor-like structures, to elucidate the problem of electrode interfaces in the case of various ferroic oxides. Further on charge transport in relation with interfaces will be studied in mode complex, multilayer structures with possible applications in tunel junctions, diodes or field effect devices.

The project involves 6 research teams from 2 host institutions, one of which is the National Institute of Materials Physics from Bucharest-Magurele, and the other one is the Alexandru Ioan Cuza University (UAIC) from Iassy. The composition of the teams is a mixes experienced researchers with excellent track records regarding preparation, characterization and modelling of advanced multifunctional materials including oxides, and young scientists at the beginning of their carriers. Some 12 PhD thesis are expected to start during the project. The project is expected to have a major impact not only at the basic science level, reflected by publications in high ranking journals, but also at the level of applied research, as for example manipulation of charge transport through designing specific interfaces or developement of new oxide architectures for ferroelectric field effect controlled of spin currents.

Comprehensive Investigation on Bulk Radiation Damage in Defect Engineered Silicon - from Point Defects to Clusters Call name: Exploratory Research Projects - PCE-2011 call
PN-II-ID-PCE-2011-3-0287 2011 - 2016

Role in this project:

Coordinating institution: Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor

Project partners: Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor (RO)

Affiliation: Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor (RO)

Project website: http://www.infim.ro/projects/comprehensive-investigation-bulk-radiation-damage-defect-engineered-silicon-point-defects

Abstract:

The aim of the project is to identify both the structure of the electrically active defects responsible for the electrical properties of the irradiated silicon diodes and the possible reactions with different impurities in the material. The identification of the main defects responsible for radiation tolerance of silicon sensors as well as their formation kinetics is of crucial importance for further developments of ultra radiation hard silicon material and it is thought that the understanding of their generation and kinetics in the presence of different kind of impurities inside the bulk of material represents the key strategy for this purpose. The proposed project aims at a specific solution of this problem, initiating systematic studies regarding the identification of the chemical structure of the harmful and of the beneficial defects in defect engineered silicon (Si with different content of O and C impurities). The generation of point and cluster related defects will be scanned by performing irradiation with only one type of particles (electrons with energies between 1 MeV and 30 MeV). Three kinds of defects investigations will be performed during the project: 1) Analysis of electrically active defects by means of DLTS and TSC methods; 2) Studies for defect identification by Electron Paramagnetic Resonance (EPR, ENDOR) methods, 3) Microstructural investigation of the extended and clustered defects by High Resolution-Transmission Electron Microscopy (HRTEM).

Study of Induced Effects by Defects and Impurities on Optical, Electrical and Electronic Properties of Wide Band Gap Semiconductors Call name: Projects for Young Research Teams - TE-2011 call
PN-II-RU-TE-2011-3-0016 2011 - 2014

Role in this project: Key expert

Coordinating institution: Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor

Project partners: Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor (RO)

Affiliation:

Project website: http://www.infim.ro/projects/study-induced-effects-defects-and-impurities-optical-electrical-and-electronic-properties

Abstract:

The aim of this project is the analysis of wide band gap semiconductor (WBS) thin films by use of non-destructive characterization techniques: ellipsometry, XRD and luminescence. These materials have existing or potential applications in optics and/or electronics. WBS thin films will be obtained by use of different thin films growth methods: pulsed laser deposition, magnetron sputtering, sol-gel and direct growth from colloidal suspension. The influence of defects and impurities on optical, electrical and electronic properties of such materials will be analyzed. The results from presented optical studies will be verified by conventional electrical measurements and structural analysis by electronic microscopy.

The project is focused on 3 types of wide band gap semiconductors: zinc oxide (ZnO) pure or doped with different elements; zinc nitride (Zn3N2) and the intermediary phases during controlled oxidation; and aluminum indium nitride (AlxIn1-xN) pure and doped with Zn. One objective is to grow and to characterize the n-type semiconductors with reproducible properties.

The estimated results will bring new insights regarding the physics phenomena involved in the growth process and the material properties, essential for obtaining viable results. In addition, special activities will be included in the project concerning the correlation between the fundamental knowledge and practical necessities of electronics, and the standardization of the growth of thin films below 200C.

Surface and Interface Science: Physics, chemistry, biology, applications. Call name: Complex Exploratory Research Projects - PCCE-2008 call
PN-II-ID-PCCE-2008-0076 2010 - 2013

Role in this project: Key expert

Coordinating institution: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR

Project partners: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU INGINERIE ELECTRICA (RO); UNIVERSITATEA DE MEDICINA SI FARMACIE CAROL DAVILA DIN BUCURESTI (RO); UNIVERSITATEA ALEXANDRU IOAN CUZA DIN IASI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA TEHNICA DIN IASI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU TEHNOLOGII IZOTOPICE SI MOLECULARE DIN CLUJ-NAPOCA (RO); UNIVERSITATEA BABES-BOLYAI DIN CLUJ-NAPOCA (RO); ACADEMIA ROMANA FILIALA TIMISOARA (RO); UNIVERSITATEA DE MEDICINA SI FARMACIE VICTOR BABES TIMISOARA (RO)

Affiliation: INSATITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR (RO)

Project website: http://www.infim.ro/projects/siinta-suprafetelor-si-interfetelor-fizica-chimie-biologie-aplicatii

Abstract:

This project intends to provide a financial background for developing the community of Surface Science in Romania. Thematics from physics and chemistry of surfaces will be tackled together with applications of surface science in biology and in technology; also new standards will be proposed for consistent data interpretation. The Project clusterizes the most important Romanian teams with preoccupations in surface science, namely all X-ray photoelectron spectroscopy teams with most of the community of thin film deposition, cluster and nanoparticle physics, surface reactivity, surface chemistry and photochemistry, multilayer physics and applications, magnetic fluids, functionalization of surfaces, cell attachment, studies of cellular membrane. The research teams belong to highly prominent Universities and Research Institutes from practically all geographical areas of the country. The Consortium disposes of infrastructure exceeding 10 million euros, of more than one hundreed highly qualified scientists which have generated during the past years more than 3 % of the national scientific visibility. The research will concentrate into four main areas: (i) magnetic properties of surfaces and low-dimensional systems; (ii) electrical properties of surfaces and heterostructures; (iii) surface chemistry; (iv) application of surface science in functionalized systems and in biology, together with (v) an area concentrating on standardization in X-ray photoelectron spectroscopy, Auger electron spectroscopy and related techniques. Each area is divided into several thematics; each thematic has at least one in-charge scientist. This Project will foster the surface science community in Romania and will contribute strongly to the development of high-technological industrial preoccupation in all geographical areas concerned. Several cutting-edge applications are also foreseen by pursuing the fundamental research proposed.

FILE DESCRIPTION	DOCUMENT
List of research grants as project coordinator or partner team leader
Significant R&D projects for enterprises, as project manager	Download (31.14 kb) 06/07/2016
R&D activities in enterprises
Peer-review activity for international programs/projects	Download (12.53 kb) 06/07/2016