BrainMap

Mr. Florin NASTASE

Ph.D.

Senior Research Physicist - INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Researcher | Scientific reviewer

Web of Science ResearcherID: B-1158-2008

Expertise & keywords

Nano meta components for electronic smart wireless systems Call name: P 5.8 - SP 5.8.1 - Premiere Orizont Europa - Instituții - Competiția 2023
PN-IV-P8-8.1-PRE-HE-ORG-2023-0033 2023 - 2026

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website:

Abstract:

New communications and radar systems require small and tunable high-frequency devices, since their backbone is the Internet-of-Things (IoT). The need for ultrafast, low-energy-consumption information processing of an exponentially increasing data volume will lead to a global mobile traffic reaching 4394 EB by 2030, thus starting the 6G era (data rate up to 1 Tb/s) of an “ubiquitous virtual existence”. In today’s wireless applications, radar sensors play one of the major roles. Due to the increased need for higher sensitivity and non-destructive inspection systems, radar sensors with operating frequency in the microwave spectrum have been gaining increasing attention for smart home, non-destructive material classification, monitoring vital signals, and all the IoT application that need micro-motion detection. The market penetration for these sensors is now hampered by (i) the limited antenna performance and (ii) the frequency selectivity and tunability. SMARTWAY proposes novel architectures based on new paradigms that exhibit a significant decrease in energy consumption while improving speed/performance and miniaturization. The disruptive nature of the targeted approach relies on progress towards the wafer-scale integration of two-dimensional (2D) materials and metamaterials (MMs) into radar sensor suitable for IoT sensing applications. The final outcome of this support activity will be a band-pass filter in the 1–5 GHz range based on nanoscale ferroelectric and carbon-based materials, thus providing brand-new designs of nanoelectronics components with emphasis on compatibility and integration of different materials/technologies.

Beam-steering antenna arrays based on nanostructured graphene/graphite for advanced microwave communications Call name: P 4 - Proiecte de cercetare exploratorie - PCE-2021
PN-III-P4-PCE-2021-0223 2022 - 2024

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: https://www.imt.ro/steering-graph/

Abstract:

The goal of STEERING-GRAPH is to integrate nanostructured graphene/graphite into CMOS-compatible beam-steering antenna arrays, in which the radiating elements will be made of a carbon-like material that ensures gain tunability (as well as frequency and matching reconfiguration), whereas the modulation of the phase needed to steer the beam of the array will be obtained using memristors/memtransistors integrating graphene/graphite layers and doped/undoped hafnium oxides. This way, the outcome of STEERING-GRAPH will be a carbon-based phased antenna array with non-volatile memristor-like switches, providing good RF performance and low-power consumption, since the non-volatility state entails that the controlling signals do not need to be applied continuously, thus minimizing power consumption (i.e., in the range 10–100 mW) and reducing antenna’s sensitivity to power outages.

The concrete objectives of STEERING-GRAPH are: (1) design, fabrication, and experimental characterisation of nanocrystalline graphite-based antennas and antenna arrays; (2) design, fabrication, and experimental characterisation of two- or three-terminal memristors based on dielectric/ferroelectric hafnium oxides and graphene/graphite; (3) hybrid and, then monolithic integration of antenna arrays and memristors/memtransistors for CMOS-compatible „non-volatile and low-power beamforming applications”.

New semiconductor ferroelectric material for digital applications Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2021-3183 2022 - 2024

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation:

Project website: https://www.imt.ro/ferromemolog/index.html

Abstract:

The project proposes to develop a new semiconductor ferroelectric at the wafer scale NiO:N (NiO doped with N) and based on it to develop switchable rectification devices, logic gates and transistors with memories where the logic operation and memory are in the same place. We have obtained the demonstration of the ferroelectricity in atomically-thin NiO doped with N. The advantages of a NiO:N ferroelectric semiconductor films are very important since on a single chip we can combine various functions of semiconductors, such as amplification and digital processing, with those specific of ferroelectrics, such as memory. Therefore, on a single chip, it could be possible to assemble all electronic functions for in-memory computing, going thus beyond the von Neumann computing architecture used today, in which the memory and the digital processing unit (ALU) are separated and the computer consumes the largest part of its electric power to transfer data between these two units.

The main outcome of this project will be the foundation of a technological platform for the ferroelectric field-effect-transistor memory devices, logic gates with memories, and for memory diodes devices with logic gates.

First demonstrator (designed to be realized from TRL 2 up to TRL 4) is a CMOS compatible device in which several layers are used forming an MFM (metal–ferroelectric–metal) diode in which, it is used, in frist time, as a ferroelectric material, a NiO:N film, then with HfO2:Zr. The Ferroelectric films layer will have thicknesses between a few nanometers and 30 nm.

Second demonstrator (designed to be realized from TRL 2 up to TRL 4) is a ferroelectric FET (Fe-FET) having as channel a graphene monolayer transferred at the wafer scale.

Both demonstrators are advanced devices at the wafer scale in the area of neuromorphic computation since the logic and memory operations are taking in the same place as in the case of neurons.

NANOelectronics based on a new generation of hafnium oxide FERROelectrics for future RF devices and circuits Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2019-0052 2020 - 2022

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.imt.ro/NANOFERRO-RF/index.html

Abstract:

Over the past five decades the continuous development of silicon (Si)-based microelectronics devices has revolutionized our everyday life, but they are now operating close to their theoretical limits in terms of device temperatures, power densities, operational frequencies and dimensions. Due to these limitations, the growth rate of Si-based CMOS technologies is starting to level out and this is becoming a bottleneck for further progress, particularly for the growing field of high-frequency electronics. To overcome the latter problem, NANOFERRO-RF proposes the concept of nanoscale high-frequency oxide electronics. In order to achieve this goal, NANOFERRO-RF will exploit a major breakthrough in materials science, i.e. the ultra-low voltage (i.e. ±3 V) high-frequency tunability of novel complex ferroelectric ultrathin films based on doped hafnium (Hf) oxide, with a thickness of few nanometres (i.e. between 6 and 9 nm). NANOFERRO-RF is based on recent and complementary achievements of the proponents, and its main goal is the validation at TRL 4 of a microwave receiver in the X band (i.e. 8-12 GHz) based on miniaturised Hf-based phase shifters, miniaturised Hf-based bandpass (X band) filters, and phased antenna arrays with frequency tuning characteristics. The outcome of NANOFERRO-RF will be a demonstrator designed with well-established electromagnetic/circuit principles, and that will possess frequency-scalability properties. This way, it will be suitable for all bands of particular interest for modern and future industrial applications, i.e. 1-6 GHz (wireless/mobile apps), 10-15 GHz (SatCom) and 24-30 GHz (NextGen 5G).

Laboratory validation of white electroluminescent carbon dot- based light emitting diodes Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2019-0841 2020 - 2022

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA BABES BOLYAI (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.imt.ro/shine/

Abstract:

The proposal aims to demonstrate and validate in laboratory the feasibility of efficient and stable carbon dot - based white light-emitting diodes (CD-WLED). The overall goal of the proposed work is to bring our theoretical and experimental advancements in the use of carbon quantum dots (CDs) with crystalline core and surface functional ligands as electro-active layer in LED devices (starting from TRL-2), to the device-level confirmation of this novel technology (conclude at TRL-4). It is envisaged to (i) validate our analytical and experimental predictions regarding the role played by grafting the CD backbone with passivating conjugated oligomer ligands in attaining superior luminescence, as well as control and stability of emitted color, and (ii) to design and develop the suitable technological steps for the assembly at the laboratory level of CD-WLED device, as well as of the associated testing and characterization system; the aim here is to achieve both a clear-cut fabrication flux, and a relevant test-bed, that will allow facile fine-tuning of the critical material, of device design and of the wet/dry structuring processes against the measured external quantum efficiency and lifetime stability of the final model device. Conclusion of the TRL-4 level will consist of raising these latter device parameters to their significant levels of technological maturity and practical usability.

Advanced nanoelectronic devices based on graphene/ferroelectric heterostructures (GRAPHENEFERRO) Call name: P 4 - Proiecte Complexe de Cercetare de Frontieră
PN-III-P4-ID-PCCF-2016-0033 2018 - 2022

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/grapheneferro/

Abstract:

Applications such as high-frequency and neuromorphic circuits, optoelectronic/plasmonic detection of biomolecules or thermo-opto-electronics energy harvesting, require tunable and reconfigurable functionalities. Graphene is suitable for these applications because of electrostatic doping, its optical constants being tuned via gate voltages. However, oxide substrates limit the mobility in graphene to few thousands cm2/V•s. On the contrary, the mobility in graphene/ferroelectric (G/F) heterostructures is 2-3 orders of magnitude larger. The groundbreaking nature of the project is based on the possibility of significantly enhancing the functionality of graphene-based transistors/devices by using crystalline ferroelectric substrates instead of common oxides or SiC substrates. The G/F heterostructures allow: (i) the achievement of very high mobilities in G/F field effect transistors (FETs), which push the transistor gain in the 0.3-1 THz range, far above 70 GHz at which the maximum gain is attained nowadays, (ii) the fabrication of uncooled tunable detectors working in the THz and IR, (iii) the exploitation of the hysteretic resistance behaviour, essential for neuromorphic applications such as artificial synapses, (iv) the fabrication of reconfigurable microwave circuits, and (v) of tunable thermoelectronic devices, since graphene displays a giant thermoelectric effect. The project will consist of the design, fabrication and testing of groundbreaking, innovative nanoelectronic devices, in particular ultrafast electronic devices, neuromorphic circuits for computation, reconfigurable and harvesting devices, all based on the outstanding physical properties of G/F heterostructures. All fabrication techniques for growing graphene-ferroelectric heterostructures in this project should be scalable at wafer scale. The project is implemented by a consortium of 3 national R&D institutes and the leading Romanian university, which have the necessary advanced infrastructure.

Sensors and Integrated Electronic and Photonic Systems for people and Infrastructures Security Call name: P 1 - SP 1.2 - Proiecte complexe realizate in consorții CDI
PN-III-P1-1.2-PCCDI-2017-0419 2018 - 2021

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO); INSTITUTUL DE CHIMIE FIZICA - ILIE MURGULESCU (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO); UNIVERSITATEA PITESTI (RO); Ministerul Apararii Nationale prin Centrul de Cercetare Stiintifica pentru Aparare CBRN si Ecologie (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.sensis-ict.ro

Abstract:

The Complex Project “Sensors and Integrated Electronic and Photonic Systems for people and Infrastructures Security” aims to develop new sensors, new integrated electronic and photonic systems for detection of explosives used in terrorist attacks or accidentally released in military bases or industrial sites.

The Complex Project is developed through four distinct projects, called “components” which are converging to the Project goals by detection of explosive substances and increasing the security of people and infrastructures, as follows:

1) Design and development of a portable microsystem, based on TF BAR sensors arrays, for multiple detection of explosives (TATP, HMTD, TNT, RDX, NG, EGDN) used in terrorist attacks; 2) SiC-based hydrocarbons sensors for measuring the hydrogen and hydrocarbons in hostile industrial environments; 3) Infrared sensors for dangerous gases detection, such as explosive gases (methane) or pollutants (carbon dioxide / monoxide); 4) Design and development of a piezoelectric energy micro-harvester, able to generate electric power in the 100µW range, used for powering up sensors and portable microsystems used in explosive gases and substances detection.

The complex project description includes the novelty elements, detailed activities description, the working procedures within the consortium, expected results and deliverables. The deliverables has an average TRL 5, which means all four component projects will have a high technological level and the result’s maturity will reach at least successful laboratory testing.

The project will deliver the sensors and integrated systems along with the energy micro-harvester as physical objects and technologies, functional and laboratory- and real conditions tested, scientific papers and patents. The project’s high impact on the participants and also the social impact are detailed.

Demonstrator fabrication in planar technology of a tunneling transistor thru ultrathin insulators - a promotor of a nanodevices series and industrial usefulness emphasis Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-0427 2017 - 2018

Role in this project:

Coordinating institution: UNIVERSITATEA POLITEHNICA DIN BUCURESTI

Project partners: UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: https://www.dcae.pub.ro/en/proiecte/14/demotun/

Abstract:

The main objective of this project is the fabrication of an electronic device prototype based on the ultra-thin insulator tunneling, as the first exponent of the so called Nothing On Insulator (NOI) transistor. In IEEE Spectrum (2014), some NASA researchers claimed that the vacuum transistors or transistors made by Nothing are the immediate future devices suitable for co-integration within CMOS ICs. For NOI, the insulator can be vacuum or oxide and is important to be ultra-thin of 2...10nm thickness. We propose in this project a planar p-NOI architecture, achievable in the Si-technology, with oxide as insulator. We start this project from preliminary results, developed in POSDRU PostDoc Project (closed in 2013), accompanied by 9 papers, 1 patent. The practical relevance of the project derives from a fabricated p-NOI device in multiple variants and the matching between experimental, theoretical and simulated curves. So that the future Atlas simulations to be anchored in a real technology, to accurate help in next projects. This obvious step of a NOI exponent fabrication was clearly demanded by the last reviewers from IEEE Transaction on Electron Devices and VLSI - as the community voice. The technical-scientific novelty and feasibility derive from: new device implementation by a well-controlled Si-planar technology, preliminary p-NOI variant already simulated in Atlas in this proposal and intermediary steps in the project plan (masks design and simulations, masks fabrication ~ intermediary steps for fabrication) and one activity of re-iteration of some technological steps to ensure the feasibility. The project management concerns the product management scheme: integration management, content, time, cost, human resources, dissemination, risk, and practical usefulness management.The experience of both teams, also demonstrated in previous common research projects and publishing, is a favorable reason to ensure the project scope and feasibility.

Graphene synthesized by Thermal Chemical Vapor Deposition and integrated in microfluidic devices for biomedical applications Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-0123 2017 - 2018

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD

Project partners: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); UNIVERSITATEA DE STIINTE AGRONOMICE SI MEDICINA VETERINARA (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.imt.ro/integraph

Abstract:

The present project proposal aims to explore possible applications of CVD grown graphene in biomedical devices by investigating possible developments of microfluidic systems with integrated graphene layers, and test their feasibility for biomedical applications. We target three possible applications of graphene: antibacterial function; electro-mechanical sensor for microfluidic flows; electric sensor for non-specific particle detection. Our aim is to implement a fabrication process for integrating single layer graphene in microfluidic devices, in order to fabricate microfluidic systems with an integrated antibacterial function, a pressure sensing function, and non-specific single cell detection function

Dye Sensitized Solar Cells With Integrated 3D GraphEne sTructures Call name: P 2 - SP 2.1 - Proiect experimental - demonstrativ
PN-III-P2-2.1-PED-2016-1159 2017 - 2018

Role in this project:

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU INGINERIE ELECTRICA ICPE - CA BUCURESTI

Project partners: INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU INGINERIE ELECTRICA ICPE - CA BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Affiliation: INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO)

Project website: http://www.icpe-ca.ro/proiecte/proiecte-nationale/pn-2016-2020/widget/widget.htm

Abstract:

The large concern of global energy challenges has greatly increased the interest and investments in renewable and clean energy that can replace fossil fuel. Among all known systems to generate energy, solar power is the most promising one. Hence, no one doubts the important role that photovoltaics (PV) are going to play in the energy of the future. The main drawbacks of the current PV technologies are their high production cost and rigid structure in the case of traditional silicon and inorganic semiconductors, or their reduced efficiency and durability in the case of organic and DSSC photovoltaics. One of the bottlenecks of increasing the conversion efficiency in DSSC is the transport of photogenerated electrons. The general approach to surpass these limitations is employing one of the following strategies: doping, growing vertically oriented porous structures on top of the conducting substrate, interconnecting TiO2 nanoparticles with charge carriers to direct the photogenerated current or find alternative materials with higher electronic mobility. Due to the richness of its optical and electronic properties, 3D graphene is the material of choice for our proposed studies. The ability to develop free-standing 3D graphene structures with large specific surface area will enable the successful realization of fast transport channels of charge carriers, thus leading to high electrical conductivity. Moreover, by combining their good electrical conductivity with their porous structure, the 3D graphene structures will increase the photocurrent density of DSSC by enhancing light absorption (sensitizer loading), enabling efficient charge separation and light scattering. In this context, the general objective of the project is: to evaluate the functionality of the 3D graphene structures in optoelectronic devices, specifically in photovoltaic cells (DSSC).

Carbon quantum dots: exploring a new concept for next generation optoelectronic devices. Call name: Complex Exploratory Research Projects - PCCE-2011 call
PN-II-ID-PCCE-2011-2-0069 2012 - 2016

Role in this project:

Coordinating institution: National Institute for Research and Development in Microtechnologies IMT-Bucharest

Project partners: National Institute for Research and Development in Microtechnologies IMT-Bucharest (RO); National Institute for Research and Development in Microtechnologies IMT-Bucharest (RO); Faculty of Chemistry and Chemical Engineering, Babes-Bolyai University (RO); Faculty of Physics, Babes-Bolyai University (RO)

Affiliation: National Institute for Research and Development in Microtechnologies IMT-Bucharest (RO)

Project website: http://www.imt.ro/cqd_opto

Abstract:

Carbon nanodots (or Carbon quantum dots, CQDs) represent a newly discovered class of nanocarbon materials, inspiring the gradually expansion of research efforts due to the increasing number of identified favorable properties. In fact, in less than a decade (2004) since their first accidental identification in carbonaceous soot, surface-passivated CQDs are already rivaling the position of traditional semiconductor-based quantum dots as top-performance photoluminescent materials, while offering at the same time radical advantages in usability and production costs. Their immediate application in bioimaging is already ascertained, however scarce studies are employing these materials in non-biological fields, even though reports demonstrating the capacity for photo-induced electron-transfer behavior in CQD leads us to the conclusion that they may additionally hold compelling potential in photovoltaics and CQD-LEDs.

It is the goal of this project to demonstrate for the first time the functionality of optoelectronic devices – LEDs and PVs – based on CQDs by thoroughly understanding from experimental and theoretical point of views the electronic, optical and transport properties of the appropriately passivated CQDs.

Advanced phosphate materials with vitreous structure, doped with rare-earth ions, applied in optoelectronics Call name:
71-054/2007 -

Role in this project: Partner team leader

Coordinating institution: INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU OPTOELECTRONICA INOE 2000 INCD

Project partners:

Affiliation:

Project website: http://optoglass.inoe.ro

Abstract:

Proiectul are ca scop modelarea structurii si a proprietatilor optoelectronice ale unor noi materiale vitroase avansate bazate pe sticle fosfatice dopate cu ioni de pamanturi rare, ca materiale de volum (SFVPR) si filme subtiri (SFFPR), obtinute prin metode conventionale si neconventionale. In principal, metoda neconventionala pe cale umeda si metoda sol-gel vor fi aplicate in scopul obtinerii sticlelor fosfatice dopate cu pamanturi rare (SFPR), de volum si, respectiv, filme subtiri. Simularea evolutiei microstructurii in procesul de sinteza si de prelucrare a acestor materiale ca si in timpul functionarii lor in cadrul unor dispozitive optoelectronice, permite imbunatatirea proprietatilor macroscopice ale acestor structuri vitroase. Optimizarea proprietatilor macroscopice permite largirea ariei de utilizare a sticlelor fosfatice dopate cu pamanturi rare, in optoelectronica si fotonica: lasere, ghiduri de unda, materiale fotosensibile, stocare optica (fibre optice), rotatori Faraday, etc.

De asemenea, proiectul vizeaza optimizarea unor proprietati remarcabile ale retelei vitroase fosfatice, precum: transmisie ridicata in domeniul ultraviolet (UV), indice de refractie liniar si neliniar scazut, viscozitate redusa si temperaturi de topire mai scazute in comparatie cu sticlele silicatice, capacitate crescuta de a ingloba ioni de pamanturi rare datorita unor efecte de structura locala si a solubilitatii ridicate a ionilor de pamanturi rare, eficienta marita a transferului energetic in sticlele fosfatice codopate (dopate cu perechi de ioni de pamanturi rare). Modele predictibile vor reduce eforturile de realizare a materialelor vitroase avansate, cu utilizari in dispozitive fotonice si optoelectronice. Caracterizarea optica si structurala a acestor materiale, metodele de proiectare si tehnicile de simulare vor fi aplicate in scopul investigarii aprofundate a fenomenelor care au loc in matricea vitroasa fosfatica si, in particular, in relatia structura-proprietati la nivele diferite (micro si macro). Cercetarea avansata va permite cresterea fiabilitatii acestor materiale in corelare cu utilizarile lor in optoelectronica. Astfel, ca tehnici de investigare vor fi utilizate metodele spectroscopice in domeniul ultraviolet-vizibil-infrarosu apropiat (UV-VIS-NIR), in domeniul infrarosu cu transformata Fourier (FTIR), Raman si fluorescenta, microscopia atomica cu forta (AFM), indicele de refractie, microscopia electronica de baleiaj (SEM) si microscopia electronica de transmisie (TEM), microscopia cu forta atomica (AFM) ca si metodele de caracterizare termica si reologica (coeficient de dilatare termica, temperaturi caracteristice: temperatura inferioara si superioara de recoacere, temperatura de inmuiere, temperatura tranzitiei vitroase) si dependenta viscositatii de temperatura.

Validarea rezultatelor modelarii si simularii corelate cu utilizarile in optoelectronica ale acestor materiale ca si evaluarea economica, energetica si de mediu a metodelor de sinteza constituie o alta directie de cercetare.

Nanocrystallography of carbon systems and the influence of structural properties on physical characteristics Call name:
PN-2, 71-121/2007-2010 2007 - 2010

Role in this project: Partner team leader

Coordinating institution: UNIVERSITATEA OVIDIUS

Project partners: UNIVERSITATEA OVIDIUS (RO); UNIVERSITATEA BUCURESTI (RO)

Affiliation: UNIVERSITATEA BUCURESTI (RO)

Project website:

Abstract:

Now, the evolution of the materials is to choose compound structure from entities very little at

nanometric scale. We can remember the case of the fiber of carbon the type fishbone compound from

graphites areas, who are getting at the size of 2-3nm. The investigation of these systems is becoming

difficult using the conventional technique. The project proposes to implement a new investigation

procedure using accumulated data through specific technique for nanometric characterisation: electron

microscopy, AFM, X Ray diffraction, spectroscopy (EDX, UV-VIS and RAMAN). The obtained

informations from a certain type of system are correlate by means of software application, developed

within the framework of the project, with the structural model associate to the experimental system.

The product of this kind of procedure gets to a agreement at the structural characteristic and to the

correct interpretation of the phenomenons directly attached of the physics characteristic of the system

which can be reformed to a peculiar application.

The project frames into the direction of research of fourth program. Partnerships in priority areas at

point 7. Materials, processes, products and innovated processes, who has as priority the thematic from

…7.3.3. Techniques, metrologies and resourceless of precisely measure .

Eulytite materials to detect radiations Call name:
PN-2, 71-007/2007-2010 2007 - 2010

Role in this project: Partner team leader

Coordinating institution: INSTITUTUL NAŢIONAL DE CERCETARE-DEZVOLTARE PENTRU FIZICA MATERIALELOR - INCDFM BUCUREŞTI

Project partners: INSTITUTUL NAŢIONAL DE CERCETARE-DEZVOLTARE PENTRU FIZICA MATERIALELOR - INCDFM BUCUREŞTI (RO); UNIVERSITATEA BUCURESTI (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO)

Affiliation: UNIVERSITATEA BUCURESTI (RO)

Project website:

Abstract:

FILE DESCRIPTION	DOCUMENT
List of research grants as project coordinator or partner team leader
Significant R&D projects for enterprises, as project manager
R&D activities in enterprises
Peer-review activity for international programs/projects