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Romania
Citizenship:
Romania
Ph.D. degree award:
2015
Mrs.
Andra-Georgia
Boni
Ph.D
Senior Researcher
-
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Researcher
9
years
Web of Science ResearcherID:
A-9393-2014
Personal public profile link.
Curriculum Vitae (21/02/2024)
Expertise & keywords
Ferroelectrics
Semicondcutors
multibit memory
neuromorphic devices
memcomputing
memristors
memcapacitors
Epitaxy
Thin films
Projects
Publications & Patents
Entrepreneurship
Reviewer section
Optimization of stable multi-polarization states in ferroelectric heterostructures
Call name:
P 1 - SP 1.1 - Proiecte de cercetare pentru stimularea tinerelor echipe independente
PN-III-P1-1.1-TE-2019-0709
2021
-
2022
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
https://infim.ro/en/project/optimization-of-stable-multi-polarization-states-in-ferroelectric-heterostructures/
Abstract:
Ferroelectric based heterostructures may hold the key to increasing storage capacity in computer systems. Non-volatile ferroelectric random access memories have been shown to have better stability and speed of read/write cycles than traditional RAM technology. However, the storage requirements of future applications are ever increasing which means that FeRAM must overcome not only the production cost of traditional RAM but also the storage capacity in order to become a viable replacement. Unfortunately, miniaturization is limited by ferroelectric properties of layers and increasing the number of stable polarization states is the only viable option. By using two or more ferroelectric layers separated by insulators, one can create more than two ferroelectric states due to polarization coupling between ferroelectric layers. The proposed project will focus on understanding the nature of the polarization coupling across the insulator layer and controlling the stability of the multiple polarization states. Such a study will be performed both through theoretical investigations and experimental fabrication of devices. The theoretical aspect will be concentrated on numerical calculations using density functional methods to investigate the ferroelectric/insulator interfaces and the stability of the polarization states. These results will be combined with thermodynamic models to obtain the polarization hysteresis characteristics that can be compared directly to the experimental reality. Structural characterization of fabricated ferroelectric/insulator/ferroelectric heterostructures will provide important clues for the interface regions which can be used to optimize the numerical calculations. The research team has been assembled in order to balance the two proposed objectives through extensive accumulated experience in both theoretical modelling and experimental fabrication and characterization.
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High quality HZO and AlN films grown by industrially compatible techniques for next generation electronic and sensing devices
Call name:
P 1 - SP 1.1 - Proiecte de cercetare pentru stimularea tinerelor echipe independente
PN-III-P1-1.1-TE-2019-0688
2020
-
2022
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
https://infim.ro/en/project/high-quality-hzo-and-aln-films-grown-by-industrially-compatible-techniques-for-next-generation-electronic-and-sensing-devices/
Abstract:
The project aims to (i) delineate the conditions for the synthesis of high-quality Aluminum Nitride (AlN) and Hafnium – Zirconium Oxide (HZO) layers onto large-area substrates by Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD), and to (ii) integrate them into electronic devices. These two materials (AlN and HZO) have a great potential for high-tech industry, e.g. pyroelectric sensors and next-generation field effect transistors.
Fundamental physics and applicative studies will be harmoniously intertwined for a better understanding of these topical materials characteristics and of their impact on the output parameters of the devices.
The project activities are designed to find the answers to several critical pending issues, such as the pyroelectricity and the origin of ferroelectricity in HZO and of the negative capacitance effect, or the sustainability and limits of AlN-based sensors in harsh environments. Ferroelectric memories, metal-insulator-semiconductor and thin film field effect transistors structures will be fabricated and subsequently analyzed, and the results will be interpolated and discussed with respect to the physico-chemical features of the AlN and HZO thin films.
CVD and ALD techniques are underdeveloped in Romania, even though they have demonstrated tremendous advantages and applicability potential for the development and large-scale production of nano- and micro-electronics. Thereby, the development and successful application of the CVD and ALD techniques, in the framework of this project, for the deposition of high-quality thin films, will represent an important achievement, of high-interest, at both regional and national level.
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High-k Nanoparticle Multilayer Dielectrics for Nanoelectronics and Energy Storage Applications
Call name:
P 4 - Proiecte Complexe de Cercetare de Frontieră
PN-III-P4-ID-PCCF-2016-0175
2018
-
2022
Role in this project:
Coordinating institution:
UNIVERSITATEA "ŞTEFAN CEL MARE" DIN SUCEAVA
Project partners:
UNIVERSITATEA "ŞTEFAN CEL MARE" DIN SUCEAVA (RO); UNIVERSITATEA "ALEXANDRU IOAN CUZA" IASI (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA LASERILOR, PLASMEI SI RADIATIEI - INFLPR RA (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
http://nanomat.usv.ro/pagina-05-5-a.php
Abstract:
Dielectrics are insulating materials that have been the workhorse in computing and electronics. Since the invention of the transistor and the integrated circuit the modern complementary metal oxide-semiconductor (CMOS) technology heavily relied on rigid SiO2/Si substrates and the relentless downscaling of the size of the transistor has been the core driver for the information revolution. However, to meet the increasing need for miniaturization, low power function and portability in both the civilian and military sector, discrete electronic components, such as capacitors, resistors, inductors and transistors should be replaced by embedded circuitry. An important roadblock in the development of energy storage and memory/switching devices with increased efficiency and range of operation is the rather low dielectric permitivity and carrier mobilities of organic polymer materials. The four research teams of the present consortium, led by A. Rotaru (USV, Suceava), L. Mitoseriu (UAIC, Iasi), I. Pintilie (NIMP, Bucharest) and A. Marcu (INFLPR, Bucharest), propose to demonstrate proof concept of manufacturable nanocrystal film structures with a high dielectric permitivity with direct applications in high energy density storage and low-voltage modulated field effect transistors and logic devices. In addressing these challenges we will use complementary expertise in materials synthesis and characterization, device design and testing with the potential of disruptive innovation in flexible electronics.
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Controlling the electronic properties in heterostructures based on ferroelectric perovskites: from theory to applications
Call name:
P 4 - Proiecte Complexe de Cercetare de Frontieră
PN-III-P4-ID-PCCF-2016-0047
2018
-
2022
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU TEHNOLOGII IZOTOPICE SI MOLECULARE I N C D T I M (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
http://infim.ro/en/project/control-of-electronic-properties-in-ferroelectric-perovskite-heterostructures-from-theory-to-applications/
Abstract:
The main objective of the project is to obtain ferroelectric materials with controlled electronic properties at the same level as this properties are controlled in Si. This will be realized by hetero-valent doping, correlated with stress engineering and band gap engineering without affecting, as much as possible, the ferroelectric properties. The main objective is complex and ambitious because, up to date, there was no experimental demonstration that it possible to obtain n or/and p type conduction in epitaxial ferroelectrics. The successful achievement of this objective will open a new domain, that of ferroelectric electronics or ferrotronics, by producing electronic devices of p-n homo-junction type or junction transistors with ferroelectric materials. Two types of materials are envisaged, namely lead titanate-zirconate (PZT with tetragonal structure and a mixed bismuth ferrite (BFO) with bismuth chromit (BCO). In the first case the heterovalent doping will be studied on Pb or Zr/Ti sites with the aim to obtain n and p type conduction. The final goal is to produce a p-n homo-junction based on epitaxial PZT films. In the second case band gap engineering will be tested by varying the Fe/Cr content, and the dominant conduction mechanism will be identified, the goal being to use the material in photovoltaic applications. The activities will contain: theoretical studies regarding the relation between dopants, electronic properties and the ferroelectricity, including self-doping effects or electrostatic doping; target preparation for deposition of thin films; epitaxial growth of the film; characterization activities of the structure and physical properties. Not only classic doping in the target is envisaged but also doping during the epitaxial growth. The consortium is composed of 4 teams from three different institutions, including a number of 14 young researchers full time equivalent.
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Controlling Ferroelectric Negative Capacitance in Multilayered Structures for Low Power Electronics
Call name:
P 1 - SP 1.1 - Proiecte de cercetare Postdoctorală
PN-III-P1-1.1-PD-2019-0696
2020
-
2022
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
https://infim.ro/project/controlul-capacitatii-negative-feroelectrice-in-sisteme-multistrat-pentru-electronica-de-putere-redusa/
Abstract:
The negative capacitance (NC) field–effect transistor (NCFET) is a new contender on the list of solutions for overcoming the limitations of scalability and energy-efficiency of conventional CMOS technology. Connecting an NC element to the gate of an FET transistor, may lead to voltage amplification on the gate, thus reducing the power consumption and heat generation. Simple thermodynamic theory predicts that ferroelectrics (FE) can display such NC effect and many articles show evidence of it, both in fundamental research and in device implementations, however there is still much ambiguity remaining in this subject. The objective of this proposal is to study the relation between the stability of polarization in NC states in multilayers and the properties of the constituent layers. First stage is dedicated to the influence of the passive elements on the properties of a high quality FE thin film capacitor. Then, the electrostatic contribution of the passive elements will be replaced by thin film layers with different electric properties (resistivity and polarizability). The main objective is to use a FE structure with NC characteristics to replace the oxide in a MOS structure and to analyze the differences in electric characteristics. With the same purpose, it will be analyzed, the FE structures that present multiple polarization states used by the candidate in previous studies. The possibility of passing through NC regime during this atypical switching, as well as the possibility of stabilizing some NC states associated with the intermediate polarizations and the continuous capacity states evidenced by the applicant will be investigated. Another novelty element of this project is to investigate the possibility of NC control using a soft FE or an antiferroelectric both with switching and back-switching at similar voltages, as a method for a hysteresis free characteristics of a NCFET. The results from this project may be used for future implementation in NCFET devices.
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Technologic paradigms in synthesis and characterization of variable dimensionality systems
Call name:
P 1 - SP 1.2 - Proiecte complexe realizate in consorții CDI
PN-III-P1-1.2-PCCDI-2017-0152
2018
-
2021
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU TEHNOLOGII CRIOGENICE SI IZOTOPICE - I.C.S.I. RAMNICU VALCEA (RO); UNIVERSITATEA DE VEST TIMISOARA (RO); INSTITUTUL NATIONAL DE CERCETARE- DEZVOLTARE PENTRU MICROTEHNOLOGIE - IMT BUCURESTI INCD (RO); INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU FIZICA TEHNICA-IFT IASI (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
http://infim.ro/project/vardimtech/, http://infim.ro/project/vardimtech-en
Abstract:
Last decades brought a considerable development of technologies based on ordered systems. Starting with semiconductor physics and photovoltaics, technologies soon evolved towards the utilisation on large scale of thin films and of surface / interface properties. Example go nowadays from data storage and readout (electrostatic or magnetic memories, giant magnetoresistance) to catalysis, gas sensors or photocatalysis (surface phenomena), and towards interfaces with biological matter (biosensors, templates for tissue reconstruction, interfaces between biological electrical signals and microelectronics). In Romania, crystal growth is performed since half a century; nevertheless, during the last years these activities fade out and need to be seriously reinforced, especially with the advent of new laser and detector technologies required by the Extreme Light Infrastructure facilities. Also, surface science started to be developped seriously only during the last decade, together with techniques involving self-organized nanoparticles, nanoparticle production etc. The main goal of this Project is to gather the relevant experience from the five partners, namely the experience in crystal growth from the University of Timișoara, with the surface science, nanoparticle and nanowire technologies developped by NI of Materials Physics, the cryogenic and ultrahigh vacuum techniques provided by the NI for Cryogenic and Isotopic Technologie, and the experience in ordered 2D systems (graphene and the like) owned by the NI for Microtechnologies (IMT). This common agenda will result in a coherent fostering of technologies relying on ordered systems of variable dimensionalities: 0D i.e. clusters or nanoparticles, including quantum dots; 1D i.e. free and supported nanowires and nanofibers; 2D: surfaces, interfaces and graphene-like systems; and 3D crystals of actual technological interest, together with setting up new ultrahigh vacuum, surface science and electron spectroscopy techniques.
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Novel generation of pyroelectric detectors based on polar semiconductors
Call name:
P 3 - SP 3.2 - Proiecte ERA.NET
ERA-M-NOPYDET
2015
-
2018
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); MICROELECTRONICA SA (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
Abstract:
The project is proposing to develop a new generation of pyroelectric detectors based on wide gap polar semiconductor materials (e.g. AlN, ZnO) able to withstand high operating temperatures. The innovative aspects will go further beyond the state of the art by proposing multilayer structures based on nitrides (AlN, GaN, etc.) and ZnO-ferroelectric structures with the aim to enhance the sensitivity as much as possible at elevated temperatures. Specific innovative aspects can result also from packaging solutions, electronic for signal processing, etc. The detectors are primarily designated for internal combustion and jet engines used in automobile and airplane industries. The aim is to increase the lifetime of the engines, their safety and to optimize the fuel consumption with reduction of green house gases emissions. The expected impact is very high considering the share of the two industries at EU level and worldwide.
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Optimized pyroelectric materials through the polarization gradient concept and experimental model for a pyroelectric detector with potential for applications in monitoring high power/energy lasers.
Call name:
Joint Applied Research Projects - PCCA 2013 - call
PN-II-PT-PCCA-2013-4-0470
2014
-
2017
Role in this project:
Coordinating institution:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA
Project partners:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO); UNIVERSITATEA POLITEHNICA DIN BUCURESTI (RO); INTERNET S.R.L. (RO)
Affiliation:
INSTITUTUL NATIONAL DE CERCETARE - DEZVOLTARE PENTRU FIZICA MATERIALELOR BUCURESTI RA (RO)
Project website:
http://www.infim.ro/projects/optimized-pyroelectric-materials-through-polarization-gradient-concept-and-experimental
Abstract:
The project aims to develop materials with optimized pyroelectric properties using the polarization gradient concept and develop integral pyroelectric detectors for the near infrared (700 nm) to THz (≤100 µm) wavelengths range. These detectors have potential application also in the detection of high power or high energy laser beams (e.g. the lasers of ELI-NP project). The materials to be used in this project are ferroelectrics with a perovskite structure such as Pb(Zr,Ti)O3 (PZT) or (Ba,Sr)TiO3 (BST) due to the fact that the transition temperatures can be modified by changing the Zr or Sr content. These materials will be combined in structures of multilayers with gradient in concentration and polarization in order to increase the figure of merit M given by the ratio between the pyroelectric coefficient p and the dielectric constant ε (M=p/ε).
The present project proposes a novel way of increasing the merit figure M by increasing the pyroelectric coefficient. This can be achieved by developing materials that exhibit a concentration gradient in the direction of the polarization, which introduces a succession of phase transitions at different temperatures, leading to a more abrupt variation of the polarization with the temperature and thus to a larger pyroelectric coefficient.
Another effect to turn to account is the temperature variation of the dielectric constant which can contribute to further increase the total pyroelectric coefficient. The temperature variation of ε can contribute to the pyroelectric signal if an electric field is applied to the ferroelectric material in order to maintain a stable polarization state, thus averting possible signal variations caused by the ambient temperature conditions.
The materials with gradient in concentration and polarization will be realized in bulk form, as ceramic wafers (25 mm minimum diameter and 6 mm thickness) by using the spark plasma sintering (SPS). Alternately, the ceramic technology coupled with classical sintering, or hot press, can be used. The sintering conditions will be optimized in order to obtain the best p/ε ratio. The selected material will then be used to build the active elements for the pyroelectric detection. In this respect, metallic electrodes will be deposited and one of them will be blackened in order to ensure a better absorbtion of the incident electromagnetic radiation. A novel approach is that carbon nanotubes are to be used for the blackening. This way the absorbtion coeficient can be increased close to 1. The active element will then be used to create pyroelectric detectors, including the electronics for signal processing and the sofware needed for PC display. Beside the mentioned ceramic materials, epitaxial multilayered structures with gradient in concentration and polarization will be realized and their pyroelectric detection properties will be investigated as well during the project.
The consortium is formed by 3 partners: coordinator of the project –CO is a national institute with experience in ceramic materials and pyroelectric detection; one university –P1 with experience in preparation of ceramic powders; one company –P2 specialized in signal procesing and different types of electrical measurements. CO and P1 will develop the active element for the pyroelectric detection and P2 will develop and test the experimental model of the system for pyroelectric detection including all the electronics and the sofware needed for the different types of applications for which the pyroelectric detector is developed by CO and P2: automatizations, non-contact measurements of temperature or monitoring of the high power/energy laser beams. The ultimate goals are to obtain: a technological process for obtaining the active element of pyroelectric detection, as well as two experimental models, one for the Pyroelectric Detector and one for a Pyroelectric Detection System used to detect high intensity laser beams.
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Effect of interfaces on charge transport in ferroic/multiferroic heterostructures
Call name:
Complex Exploratory Research Projects - PCCE-2011 call
PN-II-ID-PCCE-2011-2-0006
2012
-
2016
Role in this project:
Coordinating institution:
National Institute of Materials Physics
Project partners:
National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); National Institute of Materials Physics (RO); Alexandru Ioan Cuza University (RO)
Affiliation:
National Institute of Materials Physics (RO)
Project website:
http://www.infim.ro/projects/effect-interfaces-charge-transport-ferroelectricmultiferroic-heterostructures
Abstract:
The main objective of the project is to perform a detailed study of interfaces and their effect on the charge transport properties in a number of well defined artificial multiferroic structures. Charge transport is beneficial in some cases, for example in tunnel junctions, but can be detrimental in other cases, as for example devices based on magnetoelectric effect or in capacitor like structures. In all cases, at least the interfaces with the metallic electrodes are involved in charge transport, but other interfaces can be also involved if multilayer structures are used. The study will be performed on thin films and/or nanostructures, therefore a significant influence of interfaces on the electronic and ionic charge transport is expected. The start will be from simple capacitor-like structures, to elucidate the problem of electrode interfaces in the case of various ferroic oxides. Further on charge transport in relation with interfaces will be studied in mode complex, multilayer structures with possible applications in tunel junctions, diodes or field effect devices.
The project involves 6 research teams from 2 host institutions, one of which is the National Institute of Materials Physics from Bucharest-Magurele, and the other one is the Alexandru Ioan Cuza University (UAIC) from Iassy. The composition of the teams is a mixes experienced researchers with excellent track records regarding preparation, characterization and modelling of advanced multifunctional materials including oxides, and young scientists at the beginning of their carriers. Some 12 PhD thesis are expected to start during the project. The project is expected to have a major impact not only at the basic science level, reflected by publications in high ranking journals, but also at the level of applied research, as for example manipulation of charge transport through designing specific interfaces or developement of new oxide architectures for ferroelectric field effect controlled of spin currents.
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Comprehensive Investigation on Bulk Radiation Damage in Defect Engineered Silicon - from Point Defects to Clusters
Call name:
Exploratory Research Projects - PCE-2011 call
PN-II-ID-PCE-2011-3-0287
2011
-
2016
Role in this project:
Coordinating institution:
Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor
Project partners:
Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor (RO)
Affiliation:
Institutul National de Cercetare-Dezvoltare pentru Fizica Materialelor (RO)
Project website:
http://www.infim.ro/projects/comprehensive-investigation-bulk-radiation-damage-defect-engineered-silicon-point-defects
Abstract:
The aim of the project is to identify both the structure of the electrically active defects responsible for the electrical properties of the irradiated silicon diodes and the possible reactions with different impurities in the material. The identification of the main defects responsible for radiation tolerance of silicon sensors as well as their formation kinetics is of crucial importance for further developments of ultra radiation hard silicon material and it is thought that the understanding of their generation and kinetics in the presence of different kind of impurities inside the bulk of material represents the key strategy for this purpose. The proposed project aims at a specific solution of this problem, initiating systematic studies regarding the identification of the chemical structure of the harmful and of the beneficial defects in defect engineered silicon (Si with different content of O and C impurities). The generation of point and cluster related defects will be scanned by performing irradiation with only one type of particles (electrons with energies between 1 MeV and 30 MeV). Three kinds of defects investigations will be performed during the project: 1) Analysis of electrically active defects by means of DLTS and TSC methods; 2) Studies for defect identification by Electron Paramagnetic Resonance (EPR, ENDOR) methods, 3) Microstructural investigation of the extended and clustered defects by High Resolution-Transmission Electron Microscopy (HRTEM).
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FILE DESCRIPTION
DOCUMENT
List of research grants as project coordinator or partner team leader
Significant R&D projects for enterprises, as project manager
R&D activities in enterprises
Peer-review activity for international programs/projects
[T: 0.6112, O: 265]